Photoreflectance characterisation of GaAs and GaAs/GaAIAs structures grown by MOCVD

Abstract

Epitaxial undoped and doped (Si and Zn) GaAs and GaAlAs layers as well as heterostructuresof GaAs/GaAIAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells. The surface-and interface-related PR has been studied by application of Kramers-Kronig analysis. A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.

Infrared photomodulation spectroscopy of an In 0.22Ga 0.78Sb/GaSb single quantum well

“…The sample was mounted on a cold finger in a helium closed cycle refrigerator coupled with a programmable temperature controller allowing measurements in the 10-300 K temperature range. Further details of the experimental setup are described elsewhere [17]. The PL, reflectance (R), and transmittance (T) measurements were performed using the same apparatus.…”