Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures

Abstract

We report on photoreflectance measurements performed in the 0.8–1.6 eV photon energy range in as grown and hydrogenated InxGa1-xAs1-yNy/GaAs single quantum wells grown on GaAs substrates by molecular beam epitaxy. In the hydrogenated samples, a blue-shift of all the QW spectral features and a surprising change with temperature in the nature of the lowest energy transition are found. These features are related to the interaction of H with N atoms. An increase in the binding energy of the heavy-hole exciton upon N introduction into the InxGa1-xAs lattice has been measured also and explained in terms of an increase in the electron effective mass.