Photorefractive Properties of CdTe:Sn

Shcherbin, K.; Rudenko, V. I.; Odoulov, S.; Borshch, A. A.; Zakharuk, Z. I.; Раренко, И. М.

doi:10.1002/1521-396x(200102)183:2<337::aid-pssa337>3.0.co;2-n

Cited by 9 publications

(2 citation statements)

References 22 publications

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“…1,2 Deep-level traps maintain the insulating behavior of the material by stabilizing the Fermi level against slight spatial variations in the concentrations of shallow-level traps. 1,2 Deep-level traps maintain the insulating behavior of the material by stabilizing the Fermi level against slight spatial variations in the concentrations of shallow-level traps.…”

Section: Introductionmentioning

confidence: 99%

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

et al. 2007

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We explored the growth and characteristics of CdTe doped with Sn to heighten our understanding of the role of deep levels on electrical compensation and trapping. We demonstrated, for the first time, the strong dependence of the Sn Cd charge state on the Fermi-level variation (2-3kT) in high-resistivity CdTe. The concentration of deep traps for electrons was determined by the number of doubly positively charged Sn 2+ atoms. Thermoelectric-effect spectroscopy and photovoltage measurements revealed the conversion of the Sn Cd defect from the electron Sn Cd 2+ trap to the hole Sn Cd 0 trap. The results agree well with the existence of a negative U-center in the Sn Cd 0/2+ defect. We also showed that the neutral Sn defect is responsible for the near midgap C-band → bound hole radiative transitions band with a maximum at 0.76 eV.

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Section: Introductionmentioning

confidence: 99%

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

et al. 2007

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“…Several dopants are known at present that form in cadmium telluride impurity levels involved in photoinduced charge redistribution and enhance in such a way photorefractive sensitivity. These are vanadium [2], vanadium co-doped with manganese [3], germanium [4] and tin [5]. It was shown that some germanium-doped samples ensure the largest photorefractive coupling strength among all semiconductors without applied electric field [6].…”

Section: Introductionmentioning

confidence: 99%

Photorefractive recording in ac-biased cadmium telluride

Shcherbin

Danylyuk

Zakharuk

et al. 2004

Journal of Alloys and Compounds

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Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Fiederle¹,

Babentsov

Franc

et al. 2003

Cryst. Res. Technol.

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The growth of high resistivity CdTe and (Cd,Zn)Te is successfully performed with different kinds of doping. In the literature intentionally undoped as well as doped crystals are presented with resistivities up to 10 10 Ωcm. In this paper we review the growth of high resistivity CdTe and (Cd,Zn)Te. The mechanism of compensation is discussed regarding the different dopants and deep levels, which seem to be responsible for the high resistivity. A common compensation model explains the high resistivity by deep levels. The doping and the influence on the compensation mechanism is compared for several elements like tin, germanium and chlorine. The material properties and the crystal quality of undoped and doped CdTe as well as (Cd,Zn)Te are shown. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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Photorefractive Properties of CdTe:Sn

Abstract: Tin is shown to be a suitable dopant that makes it possible to grow cadmium telluride crystals with considerably reduced conductivity (semi-insulating material) and ensures a well pronounced photorefractive response both for cw and Q-switched Nd 3þ : YAG laser radiation.

Cited by 9 publications

References 22 publications

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

Photorefractive recording in ac-biased cadmium telluride

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

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Photorefractive Properties of CdTe:Sn

Abstract: Tin is shown to be a suitable dopant that makes it possible to grow cadmium telluride crystals with considerably reduced conductivity (semi-insulating material) and ensures a well pronounced photorefractive response both for cw and Q-switched Nd 3þ : YAG laser radiation.

Cited by 9 publications

References 22 publications

Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe

Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe

Photorefractive recording in ac-biased cadmium telluride

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Contact Info

Product

Resources

About

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe