2023
DOI: 10.1016/j.jphotochem.2022.114351
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Photoresists based on bisphenol A derivatives with tert-butyl ester groups for electron beam lithography

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Cited by 8 publications
(4 citation statements)
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“…The most important design criteria for optimizing photoresist performance in EUV require research on materials with high EUV absorption elements, defined molecular structures, as well as small and homogeneous sizes. 9–15…”
Section: Introductionmentioning
confidence: 99%
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“…The most important design criteria for optimizing photoresist performance in EUV require research on materials with high EUV absorption elements, defined molecular structures, as well as small and homogeneous sizes. 9–15…”
Section: Introductionmentioning
confidence: 99%
“…The most important design criteria for optimizing photoresist performance in EUV require research on materials with high EUV absorption elements, dened molecular structures, as well as small and homogeneous sizes. [9][10][11][12][13][14][15] Metal oxides [16][17][18] that can incorporate high EUV absorption elements into the molecular frameworks exhibit promising application prospects in EUVL. In particular, among the various metal oxides, MOCs are hybrid inorganic-organic molecular compounds with a well-dened number of metallic elements and organic ligands.…”
Section: Introductionmentioning
confidence: 99%
“…Several materials, including calixarene derivatives, , polyphenols, Noria molecules, , and fullerene derivatives, have been explored as MG resists in EUV or e-beam lithography. Our recent work has led to the development of a series of MG resists based on bisphenol A, spirobifluorene, tetraphenylsilane, and adamantane derivatives , for EUV and electron beam lithography (EBL), successfully delivering patterns with high resolution and low LER. Most of the research focused on molecular CAR, while non-CAR based on MGs is relatively unexplored.…”
Section: Introductionmentioning
confidence: 99%
“…Ober's group and Giannelis' group [34] reported the first HfO 2 -based metal nanoparticle photoresists and studied them for use in electron beam lithography to obtain 50 nm lines with sensitivity of about 103 µC cm −2 . Yang's team [35,36] developed a chemically amplified photoresist by modifying the number of leaving groups to adjust its sensitivity to 52 µC cm −2 . Numerous studies [10,37,38] have reported electron beam exposure doses of 10 µC/cm −2 or more for photoresists, with commercially available photoresists requiring as high as several hundred to thousands of µC cm −2 exposure doses [39][40][41].…”
Section: Introductionmentioning
confidence: 99%