2013
DOI: 10.1016/j.pnsc.2013.11.001
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Photoresponse and H2 gas sensing properties of highly oriented Al and Al/Sb doped ZnO thin films

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Cited by 8 publications
(2 citation statements)
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“…While Sn doping concentration increases the optical band gap of ZnO films decreases. This shift in the optical band gap may be attributed to the band shrinkage effect because of increasing carrier concentration, Benelmadjat et al [26]. The values of Eg obtained of ZnO:Sn films are almost the same values obtained by other group of tin doped ZnO films prepared by sol-gel method [27].…”
Section: 3uv-visible Spectrophotometer (U-vis)supporting
confidence: 56%
“…While Sn doping concentration increases the optical band gap of ZnO films decreases. This shift in the optical band gap may be attributed to the band shrinkage effect because of increasing carrier concentration, Benelmadjat et al [26]. The values of Eg obtained of ZnO:Sn films are almost the same values obtained by other group of tin doped ZnO films prepared by sol-gel method [27].…”
Section: 3uv-visible Spectrophotometer (U-vis)supporting
confidence: 56%
“…The most typical multifunctional semiconductors in this review are silicon and perovskites. Nevertheless, gas adsorption induced photoresponse change was observed in SnO 2 [120], SnSe [121], SnS [122], PW 12 -TiO 2 [123], MoS 2 [124], WS 2 [125], GaS [126], W 18 O 49 [127], LaAlO 3 /SrTiO 3 [128], ZnO [129]- [132], and various materials fabricated into field-effect transistors and metal-semiconductor-metal device structures. The literatures with different focuses commonly discuss how the absorbent gases affect the generation of a photocurrent.…”
Section: A Exploitation Of Applicable Materialsmentioning
confidence: 99%