Photoresponse Enhancement in Ge MSM Photodetector With Ge Micropillar Array

Step-like 10-nm channel for high-performance PbS colloidal quantum dots near-infrared photodetector

“…With the rapid development of the internet of things (IoT), optoelectronic integrated circuits based on near-infrared (NIR) photodetectors have garnered increasing attention in various fields, including healthcare, food safety, environmental monitoring, as well as smart agriculture and industry. 1–4 Although narrow band gap semiconductor materials, such as InGaAs 5 and Ge, 6 have commonly been used in NIR photodetectors, their high-temperature epitaxial growth and intricate flip-chip packaging processes are not compatible with mature Si-based CMOS processes. 7 Recently, solution-processed lead sulfide colloidal quantum dots (PbS CQDs) have attracted extensive interest due to the tunable absorption from visible to short-wavelength infrared by adjusting the dot size, and the low-cost solution-processability makes them compatible with a wide range of substrates.…”

The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

“…In the past ten years, more and more attention has been focused on the Silicon-based and Germanium-based semiconductor nanocrystals since they can be used in many kinds of devices such as light emitters, thin-film solar cells, photoelectric sensors, as well as nonvolatile memories [1][2][3][4][5][6][7]. Compared with Si, Ge has larger electron and hole mobility, a narrower band-gap (0.67 eV) as well as high phonon responsivity in the near-infrared region [8][9][10], which is beneficial to fabricate Ge-based photodetectors and Ge-based thin film transistor (TFT) with good device performance [11][12][13][14]. In order to further enhance the performance of devices based on Si and Ge NCs, active doping is usually required to obtain all kinds of desired properties of the Si and Ge NC materials [15][16][17][18].…”