2009
DOI: 10.1246/bcsj.82.401
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Photoresponse of GaN:ZnO Electrode on FTO under Visible Light Irradiation

Abstract: The photoelectrochemical properties of a GaN:ZnO solid solution coated as an electrode on conductive glass are investigated through measurement of voltammograms and current–time curves. The highest photocurrent was achieved by a GaN:ZnO sample with relatively high zinc concentration (Zn/Ga = 0.42) and small particle size, presumably due to more efficient electron transfer through the porous electrode. The electrode exhibits anodic photocurrent under visible light, indicating functionality as an n-type semicond… Show more

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Cited by 50 publications
(74 citation statements)
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“…47 ZnO-rich (Ga 1Àx Zn x )(N 1Àx O x ) produced by solution combustion method generated visible driven photocurrent that was 30 times higher than for ZnO. 47 The light source (300 W Xe arc lamp) was passed through a 435 nm long pass lter to isolate the visible-light driven photo-response. 14 The current-voltage curves for lms of bulk (x ¼ 0.40) and nanoscale (x ¼ 0.40, 0.52, and 0.87) (Ga 1Àx Zn x )(N 1Àx O x ) on FTO were measured in aqueous solution with 0.5 M Na 2 SO 4 (Fig.…”
Section: Pec Activity Of Bulk and Nanoscale (Ga 1àx Znmentioning
confidence: 99%
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“…47 ZnO-rich (Ga 1Àx Zn x )(N 1Àx O x ) produced by solution combustion method generated visible driven photocurrent that was 30 times higher than for ZnO. 47 The light source (300 W Xe arc lamp) was passed through a 435 nm long pass lter to isolate the visible-light driven photo-response. 14 The current-voltage curves for lms of bulk (x ¼ 0.40) and nanoscale (x ¼ 0.40, 0.52, and 0.87) (Ga 1Àx Zn x )(N 1Àx O x ) on FTO were measured in aqueous solution with 0.5 M Na 2 SO 4 (Fig.…”
Section: Pec Activity Of Bulk and Nanoscale (Ga 1àx Znmentioning
confidence: 99%
“…14 The current-voltage curves for lms of bulk (x ¼ 0.40) and nanoscale (x ¼ 0.40, 0.52, and 0.87) (Ga 1Àx Zn x )(N 1Àx O x ) on FTO were measured in aqueous solution with 0.5 M Na 2 SO 4 (Fig. 47,49 Nanoscale (Ga 1Àx Zn x )(N 1Àx O x ) showed higher photocurrents by a factor of two and four for x ¼ 0.40 and x ¼ 0.52, respectively. The experiments were carried out at pH 4.5 because the highest photocurrent for the bulk (Ga 1Àx Zn x )(N 1Àx O x ) in PEC oxidation was achieved at this pH.…”
Section: Pec Activity Of Bulk and Nanoscale (Ga 1àx Znmentioning
confidence: 99%
“…The Domen group used the solid reaction method to synthesize a Ga 1-x Zn x N 1-x O x solid solution with a ZnO content of 30% or less and discovered that its band gap decreased as X increased and was 2.5 eV when X = 0.312. Jensen et al .…”
Section: Resultsmentioning
confidence: 99%
“…All the photocurrents of the Ga 1-x Zn x N 1-x O x solid solutions, including the literature data reported thus far, were converted into the value of 1.23 V of an NHE at a pH of 0 and plotted. The photocurrent characteristics of Ga 1-x Zn x N 1-x O x solid solutions have been reported for films formed by the electrophoresis method12 and the doctor blade method16. The photocurrents reported thus far are on the several μA/cm 2 level.…”
Section: Resultsmentioning
confidence: 99%
“…GaN has a suitable band gap position for water splitting, but it activated only by ultraviolet light irradiation [6][7][8][9][10][11][12][13][14][15]. However the band gap of the solid solutions which was formatted with InN [16][17][18][19] and ZnO [20,21] can be controlled and solar water splitting under visible light irradiation can be achieved. Photoelectrochemical water splitting by using the particulate thin film semiconductor electrode has a strong merit over photocatalytic water splitting with a suspension system because hydrogen and oxygen can be produced separately.…”
Section: Introductionmentioning
confidence: 99%