Photoresponse of hydrogen plasma treated and electron irradiated silicon wafers

Zinchuk, O.; Drozdov, N. A.; Mazanik, A.V.; Fedotov, А.К.; Partyka, J.; Węgierek, P.; Kołtunowicz, T.

doi:10.1016/j.vacuum.2007.01.039

Cited by 1 publication

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“…In other words, the measured PV signal was generated exclusively by the barriers existing within the studied samples. A more detailed description of the photovoltage experiments is given in [2].…”

Section: Methodsmentioning

confidence: 99%

Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers

Saad

Zinchuk

Drozdov

et al. 2007

SSP

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The main goal of this work is to investigate the influence of low-temperature argon ionbeam treatment on the electric and structural properties of a near-surface region of the standard commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of photovoltage spectra have shown that (i) Ar+ and H+ treatments in like manner lead to the appearance of a photovoltage signal over a wide spectral region due to the formation of p-n-junction on the treated surface, and (ii) photosensitivity of the Ar+ ion-beam treated wafers in the ultraviolet (UV) spectral region (200-400 nm) is much greater as compared to the wafers subjected to H+ ion beam treatment in the same conditions. The main difference in the Ar+ and H+ ion-beam treatment effects is the formation of a thin (5-20 nm) oxygen-containing dielectric layer on the surface of hydrogenated samples and the absence of such layer in case of Ar+ ion-beam treatment.

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Section: Methodsmentioning

confidence: 99%