Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots

Abstract

This paper describes the optical responses and memory effects of poly͑3-hexylthiophene͒ ͑P3HT͒/ CdSe quantum dot ͑QD͒ thin-film transistors ͑TFTs͒. TFTs incorporating P3HT/CdSe QD blends as the active layer exhibited higher photocurrents than did the corresponding P3HT-only devices because the heterojunction between P3HT and the CdSe QDs enhanced the separation of excitons. Moreover, the CdSe QDs served as trap centers so that the memory effect was maintained for several hours, even when the device was operated without a gating voltage. Here, we demonstrate the potential applicability of such P3HT/CdSe QD TFTs through repeated optical programming and electrical erasing.

Enhancement of Hole Mobility of Poly(3‐hexylthiophene) Induced by Titania Nanorods in Composite Films

“…[ 1 ] Organic-inorganic nanocomposites are one type of advanced material for organic devices because of the expected synergy between the organic and inorganic components, which lead potentially to new physical properties of the composites and various applications in devices, including solar cells, [2][3][4][5][6] phototransistors, [7][8][9] memories, [ 10 ] and sensors. [ 11 ] The composites of a conjugated polymer such as poly(3-hexylthiophene) (P3HT) and inorganic nanoparticles, such as ZnO, TiO 2 , or CdSe, have been used in organic solar cells, and gratifying power conversion effi ciencies (PCEs) up to 3.8% have been obtained.…”

An upconverted photonic nonvolatile memory

“…Eventually, the high-energy emission from UC materials are reabsorbed by the active semiconductor layer and more photoexcitons are generated in the active layer, which ultimately influence the charge-trapping efficiency and data storage levels of the memory device. Nanocrystals dispersed in the semiconductor polymer matrix as the charge-trapping element is a critical step in the quest to fabricate low-cost flash memory [35][36][37][38] . Meanwhile, using nanocrystals as charge-trapping elements can control the trapping levels and sites through solution process, which is highly desirable for printed electronics [39][40][41] .…”

Thermal-Actuated Optoelectronic Memory Medium Based on Carbon Nanotube− and Nickel−Poly(dimethylsiloxane) Composites

“…Furthermore, the conducting network can be reconstructed by electric pulses; i.e., the memory device can be performed reversibly. The switching and memory mechanism in the proposed OEM device is totally different from those in previous studies (7)(8)(9)(10)(11)(12)(13). In general, the performance has remarkably outperformed state-of-the-art polymer-based OEM devices (7)(8)(9)(10)(11)(12)(13).…”