Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer

Kim, Min Je; Choi, Shinyoung; Lee, Myeong Jae; Heo, Hyojung; Lee, Youngu; Cho, Jeong Ho; Kim, BongSoo

doi:10.1021/acsami.7b03058

Cited by 21 publications

(20 citation statements)

References 49 publications

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“…The bulk heterojunction phototransistor containing PDPPTTT and poly(3‐hexylthiophene) (P3HT) exhibited an ambipolar transport property and a maximum R close to 1 A W −1 was obtained at 795 nm . Kim et al synthesized a polymer containing electron‐accepting DPP and benzothiadiazole (BT) and electron‐donating thienothiophene (TT) moieties with an optical absorption peak of ≈720 nm . The field‐effect mobility and photocurrent of this material showed significant enhancement after proper annealing.…”

Section: Organic Ir Phototransistorsmentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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The operating frequency of ring oscillators or radio-frequency identification tags made by OFETs have surpassed MHz. [27,28] With the growing level of integration and the operating frequency of OFETs, the power dissipation issue can no longer be ignored. Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. In addition, OFETs fabricated on flexi ble substrates somehow limit the use of conventional batteries. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators. [29,30] All of these demands require OFETs operating with extremely low power consumption. Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low-power-consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field-effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET-related energy topics, including lowpower-consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.

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Section: Organic Ir Phototransistorsmentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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“…Therefore, these devices provide a unique opportunity for the formation of advanced organic electronic devices such as complementary logic circuits, and the use of photoresponsive semiconducting materials further broadens the range of possible use. Ambipolar charge transport in OPTs can be achieved using different active layers, such as single‐component ambipolar films, polymer blends, donor–acceptor copolymers, nano/microwires, and bilayers . We also demonstrated ambipolar transistor with microcrystal embedded active layer composed of p‐type 6,13‐bis(triisopropylsilylethynyl)pentacene (TIPS‐pentacene) and n‐type F 16 CuPc …”

Section: Introductionmentioning

confidence: 94%

Interdigitated Ambipolar Active Layer for Organic Phototransistor with Balanced Charge Transport

Jeong

Tarsoly

Lee

et al. 2019

Adv Elect Materials

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OFET-based light sensors, or organic phototransistors (OPTs), [13,[15][16][17][18][19][20][21] are threeterminal devices that can use incident light as an additional external terminal for photocarrier generation in addition to the carriers induced by the gate field effect, enabling simultaneous light sensing and signal amplification in a single device. The sensitivity and signal-to-noise characteristics of OPTs are superior to those of organic photodiodes, and OFET-based light detectors show good response times and high current gains without requiring low-work function electrodes such as calcium. [13,22,23] OPTs can be used in large-area applications [24] because of the solution processability of the components; they can also be used as high-performance photocontrolled memory devices through the effective manipulation of gate voltage and incident light intensity. [25][26][27][28] Most OPTs are unipolar OFETs based on active layers with either hole (p-type) or electron (n-type) transport behaviors; their performance is approaching the threshold permitting practical use. [29][30][31][32] Although these devices can be prepared relatively easily, they can only operate in either positive or negative gate-voltage regimes, [33] which is a serious disadvantage in fabricating efficient electronic circuits. On the other hand, ambipolar OFETs, which can be operated under both polarities due to the coexistence of electron and hole carriers, can simplify the fabrication process of logic circuit and reduce the fabrication cost. Therefore, these devices provide a unique opportunity for the formation of advanced organic electronic devices such as complementary logic circuits, [34] and the use of photoresponsive semiconducting materials further broadens the range of possible use. Ambipolar charge transport in OPTs can be achieved using different active layers, such as single-component ambipolar films, [35,36] polymer blends, [37,38] donor-acceptor copolymers, [39,40] nano/microwires, [41,42] and bilayers. [43,44] We also demonstrated ambipolar transistor with microcrystal embedded active layer composed of p-type 6,13-bis (triisopropylsilylethynyl)pentacene (TIPS-pentacene) and n-type F 16 CuPc. [45] In this study, OPT devices with the interdigitated active layer composed of TIPS-pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C 13 ) have been fabricated. We investigated the effect of the composition of the interdigitated active layer on the charge transport properties of the devices by varying the thickness of PTCDI-C 13 layer fromThe formation and characterization of interdigitated ambipolar active layers prepared by a hybrid (solution processing and thermal vacuum evaporation) method for a polymer-gated organic phototransistor with highly balanced ambipolar charge transport is reported. The interdigitated active layer is comprised of a solution-processed single-crystalline microcrystal array of p-type 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and a thin film of n-type N,N′-ditrid...

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“…The active layer in the NIR OPT plays the role as light absorber and charge transport media simultaneously. Thus, parameters including the absorption coefficient ( Li et al., 2017 ), exciton dissociation efficiency ( Han et al., 2015 ; Xu et al., 2013a ), and carrier mobility ( Kim et al., 2017 ; Lei et al., 2017 ; Li et al., 2017 ) would largely define the performances of the NIR OPTs. Simultaneously, efficient charge photogeneration and charge transport in the active channel are key factors to attain high-performing NIR OPTs ( Kim et al., 2017 ; Lei et al., 2017 ; Li et al., 2017 ).…”

Section: Introductionmentioning

confidence: 99%

Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels

Lei

Miao

et al. 2022

iScience

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Summary The factors that affect the electrical ideality and photoresponse in near-infrared (NIR) organic phototransistors (OPTs) are still nebulous. Here, simultaneous increase in electrical ideality and NIR response in the OPTs is realized by applying a bulk heterojunction (BHJ) channel. The acceptor in the channel helps to trap the undesirable injected electrons, avoiding the accumulation of the electrons at the active channel/dielectric interface, and thereby improving the hole transporting. Use of a BHJ channel also helps reducing the contact resistance in the OPTs. The electrical stability is then improved with mitigated dependence of charge mobility on gate voltage in the saturation region. The BHJ channel also offers an improved photoresponse through enhanced exciton dissociation, leading to more than one order of magnitude increase in responsivity than that in a control OPT. The results are encouraging, which pave the way for the development of high-performing NIR OPTs.

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Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer

Cited by 21 publications

References 49 publications

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Interdigitated Ambipolar Active Layer for Organic Phototransistor with Balanced Charge Transport

Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels

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