Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode

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The structure of carbon nanotubes behaves as a p-type semiconductor deposited on the n-silicon wafer formed P-N junction was investigated. This structure of Au/CNTs/n-Si/Al has novel electric and dielectric properties such as high rectification ratio, low dielectric loss tangent, and high dielectric loss (ɛ'), which increases with declines frequency reaches to 4x104 in the positive direction of dielectric constant at a frequency equals 100 Hz and reaches to -1x106 in the negative region of dielectric constant at frequency 10 Hz. The dielectric loss tangent (tanδ) has low values which are raised with a decline in frequencies, causing their values to fluctuate from 0.15 to 0. 20. The ɛ' and tanδ have negative values at high and low frequencies, though the ɛ' has positive values at mid frequencies. The electrical properties of this device were investigated by studying I-V, Cheung, dv/dlnI, and Norde characterization. The parameters such as rectification ratio (RR), the resistance of junction (Rj), barrier height (ɸb), and ideality factor were calculated.

Section: Resultsmentioning

confidence: 99%

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Ashery¹,

Gad²,

Turky³

et al. 2022

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“…[23][24][25] The increases of temperature leads to variation of the place of the original dipoles that improve the forte of the state polarized and formerly the values of ε (T). [26][27][28][29] Figure 5 reveals dielectric constant vs voltage at selected temperatures and constant frequencies of PA-GO composite/MnO 2 /Fe 3 O 4 /n-Si. The depicted dielectric constant, ε′, in Figs.…”

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confidence: 99%

Negative Dielectric Constant in Novel Structure of PA-GO Composite /MnO₂/Fe₃O₄/n-Si

Ashery,

Gad,

Turky

2024

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We present a novel structure of PA-GO composite /MnO2/Fe3O4/n-Si arranged by simple technique and examined by scanning electron microscope, X-ray diffraction, and Raman spectroscopy. The negative dielectric constant appeared for all voltages at frequencies of 103, 102, 10 Hz, proving that the dielectric constant has negative values only at frequencies above one megahertz 106Hz. Also, the dielectric loss has negative values with temperature at all voltages and high frequencies. This structure also has a low dielectric loss tangent from 4 to 50 with all voltages and temperatures and high rectification ratio reach to 1200 times, and high Rj. The performance of dielectric constant, dielectric loss, and dielectric loss tangent depend on the change of frequencies and voltages. The electrical properties of this structure were examined by conventional, dv/dlnI, and the Nord and Cheung method. The ideality factor fluctuates between 3.09 and 3.29, and the barrier height is in the range of 0.56 to 0.58 at room temperature. We found similar results using different methods of measuring the electrical properties. This indicates that the structure is a promising material for preparing diodes, supercapacitor, and high storage devices.

“…[1][2][3][4] Conversely, Copper metallization does not illustrate a similar self-protective result to Al, nevertheless, its main activation energy reduces the EM fail, declined Cu less than (1.5 at%) in Al boosts the reflection of the AlCu composites in the observable range, 4,5 according, approximately the authors endorse maintaining an adequate Cu in the grain limitations to evade exhaustion, and therefore, EM fail. 2,6 A little atom of copper less than 0.5-5 wt% to Al, reduces harms in AlCu interconnections via EM, growing its period. 7,8 Correspondingly, a little aluminum atom is about 1 at% to Cu decreases the corrosion degree numerous orders of the amount given that longer firmness to the material, providing a little surface irregularity afterward a tempering procedure.…”

mentioning

confidence: 99%

“…This is probably described as the presence of a space charge at the grain borders. [6][7][8][11][12][13] Plots 3a-3g reveal Col-Col diagram, which described by Eqs. 4, 5 at dissimilar temperatures and voltages of Au/AlCu/SiO 2 /p-Si/Al.…”

mentioning

confidence: 99%

Impedance Spectroscopy and Electrical Properties of Novel Structure of Au/AlCu/SiO₂/p-Si/Al

Ashery,

Gad

2024

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Au/AlCu/SiO2/p-Si/Al is a novel assembly synthesized by the technology of liquid phase epitaxy (LPE). Using impedance spectroscopy the electric and dielectric properties of these structures have been characterized as a function of voltage, frequency, and temperature. All real parts of the impedance curve at different temperatures, voltages, and frequencies formed small peaks at higher frequencies. At low and mid frequencies, the real part of impedance Z' is independent of frequencies. For all curves of Z՝՝, the imaginary parts of the impedance at dissimilar voltages, frequencies, and temperatures have positive values at low frequencies. At lnf = 5 the Z'' have negative values and create peaks. The growth of Z'' value was consistent with decline temperatures, at high frequencies, the Z'' formed peaks with positive and negative values. The Col-Col diagram, at different temperatures and voltages, was investigated. The conventional Cheung and Nord methods were applied to study the electric factors such as series resistance Rs, barrier height and ideality factor n.