Photosensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode

Lin, Yen-Kai; Hwu, Jenn–Gwo

doi:10.1109/ted.2014.2334704

Cited by 33 publications

(28 citation statements)

References 24 publications

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“…The relation between φ * h and F e is expressed as follows [12]: where B is a constant, φ h0 is the Schottky barrier height of holes without considering the effect of lateral flux of electrons, φ h is the lowering of Schottky barrier height related to the lateral flux of electrons and the oxide thickness, D n is the electron diffusion coefficient, μ n is the electron mobility, E x is the lateral electric field, and n e (x) is the electron concentration. x = 0 is the position at the gate edge, and x = S * is the position at the depletion region edge of the MIS TD.…”

Section: Resultsmentioning

confidence: 99%

“…Also, note that the saturation current increases with the tunnel oxide thickness. Since the oxide voltage is larger with a larger oxide thickness, the effective Schottky barrier decreases with thicker tunnel oxide [12], which is known as the Schottky contact resistance reduction effect [13]- [16]. The theoretical mechanism can be deduced as follows.…”

Section: Introductionmentioning

confidence: 99%

“…Hence, a slight change in Q s would induce a dramatic change in I TD . In the previous works, it was demonstrated that the saturation currents of the MIS TD could be changed dramatically by illumination [12], temperature [20], and nearby gate bias [11], [18] since the surroundings would cause the fluctuation of minority carrier concentration at device edge and therefore change the effective Schottky barrier height. This work is an extension of [11] and [18] for further discussions about the physical mechanisms of the electrodes space narrowing effect and the oxide thickness effect to the transconductance of gated MIS TD, especially for NT behavior.…”

Section: Introductionmentioning

confidence: 99%

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Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode

Liao

Hwu

2016

IEEE Trans. Electron Devices

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The transfer characteristics of a metal-insulatorsemiconductor (MIS) tunnel diode (TD) controlled by a separated MIS TD as gate were investigated. Negative transconductance (NT) exists around the flat-band region in the transfer curve even though the separation between the gate and the MIS TD is large (up to several tens of micrometers). We called it remote gate-controlled NT (RG-NT). With the aid of the Technology Computer Aided Design simulation, the turn around behaviors of the lateral electric field and electron concentration around the flat-band region explain well the RG-NT phenomenon. The peak-to-valley current ratio (PVCR) of the RG-NT increases with the tunnel oxide thickness. The maximum PVCR obtained in this work is 1.3 × 10 6 while the oxide thickness is 3.3 nm.Index Terms-Metal-insulator-semiconductor (MIS) tunnel diode (TD), negative transconductance (NT), peak-to-valley current ratio (PVCR), remote gate-controlled, Schottky barrier modulation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode

Liao

Hwu

2016

IEEE Trans. Electron Devices

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“…[10][11][12][13] These devices can be used as temperature sensors, 14,15 light sensors, 16,17 memories, 18,19 transconductors, 20,21 etc. For MOSCAP with Al gate and p type substrate, the effective Schottky barrier height appears in the hole current conduction path in the inversion bias region.…”

mentioning

confidence: 99%

“…This can be explained by the change of effective Schottky barrier height due to the oxide voltage drop modulation and the lack of the minority carrier. 16 However, the effect of the existence of the edge oxide was rarely discussed. It was expected that when the edge oxide was removed, the fringing field and also the conduction current at edge should be changed.…”

mentioning

confidence: 99%

Role of fringing field on the electrical characteristics of metal-oxide-semiconductor capacitors with co-planar and edge-removed oxides

Yang

Hwu

2016

AIP Advances

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Due to the simplicity of the fabrication process, the ultra-thin oxide metal-oxide-semiconductor capacitors (MOSCAPs) can be a promising device for sensing, memory, and transconductance applications. The investigation of the fundamental electrical characteristics of ultra-thin oxide MOSCAPs is still of importance. In this work, the influence of the removal of the surrounded gate oxide was studied to know the role of fringing field. For edge-removed oxide, the tunneling saturation current shows no oxide thickness dependency and exhibits a low current level of 9.4×10−11 at 2V (dox=2.3 nm). Also, its deep depletion occurs earlier when biasing. In contrast, for the device without oxide removing, i.e., co-planar oxide, the saturation current is strongly related to the oxide thickness and exhibits a high current level of 3.5×10−6 at 2V (dox=2.3 nm) due to regular oxide voltage drop modulation effect on effective Schottky barrier height. For the thick oxide of 4.2 nm the inversion capacitances are frequency dependant for CP-OX but are independent for ER-OX MOSCAPs. These characteristics are mainly caused by the different fringing fields and the defect densities at device edge between two structures.

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