Photosensitive oxide—p-In4Se3 heterostructures

Abstract

or by forming In,O,-In,Se, heterojunctions using thermochemical techniques [2]. To improve the photoelectric properties of the In,Se, diodes new techniques of heterojunction formation are required. In the present note, a simple technique for fabricating In,Se, diodes by thermal oxidation of crystalline substrates is described [3].In,Se, single crystals were grown from the melt containing 5% Se in excess of the stoichiometric composition, by the Czochralski method invoking the Peltier effect. As-grown crystals were annealed in z Pa vacuum at 300 "C for 150 h. The substrates were prepared by cleavage and exhibited mirror-like surfaces that required no additional treatment. The room-temperature resistivity and carrier concentration of the samples were measured to be lo3 Q cm and 1014 cm-,, respectively. Oxidation of the samples was carried out in air atmosphere by heating in a resistance furnace at constant temperature. The structure thus obtained was found to have diode properties; p-n junction properties were measured in the (100) plane. The best diode properties were achieved by varying the fabrication conditions such as the oxidation time, temperature, etc. Ohmic contacts were made by indium soldering.

Gain Spectrum for the In4Se3Crystal with a Non-Standard Dispersion Law of Charge Carriers

“…71.20.Nr, 72.40.+w, 78.20.Ci 1. Crystalline structure and energy spectrum of the In 4 Se 3 crystalRecently, a growing interest to some layered indium selenides [1][2][3] has occurred due to their non-standard dispersion laws for charge carriers and the possibility to create InSe-In 4 Se 3 heterostructures [4]. The layered In 4 Se 3 semiconductor belongs to the orthorhombic system and its symmetry is described by the D 12 2h (P nnm) space group.…”