Photosensitivity of Pb1−x SnxTe:In films in the terahertz region of the spectrum

Akimov, A. N.; Erkov, V. G.; Kubarev, V. V.; Molodtsova, E. L.; Климов, А. Э.; Shumskii, V. N.

doi:10.1134/s1063782606020096

Cited by 14 publications

(4 citation statements)

References 7 publications

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“…This value is larger by a factor of about 100 than the responsivity of the Ge:Ga photoconductor in the same conditions of the experiments (T »4 K, detectors protected from the back− ground radiation). The photoresponse signals were obser− ved at wavelengths up to 337 μm [151]; it is one of the high− est cut−off wavelengths observed so far for extrinsic semi− conductor photodetectors.…”

Section: Another Extrinsic Detectorsmentioning

confidence: 82%

“…However, the smaller binding energy of shallow donors in GaAs compared to Ge results in response at wavelengths exceeding 300 μm without uniaxial stress. Among THz low−temperature cooled detectors there exist many publications about the possibility of using Pb 1-x Sn x Te:In (x »0.25, In content is about 2 atomic %) photoconductors as THz detectors in the range of 1 THz [23,24,[149][150][151][152][153][154]. Persistent photoresponse with current res− ponsivity about 10 3 A/W at 40 mV bias and integration time »1 s at the wavelengths of 90 μm and 116 μm has been observed in Pb 0.25 Sn 0.75 Te:In photoconductors [149].…”

Section: Another Extrinsic Detectorsmentioning

confidence: 99%

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Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

322

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Another Extrinsic Detectorsmentioning

confidence: 82%

Section: Another Extrinsic Detectorsmentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

322

225

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“…[180]. Also photorespon− se in the longer wavelength range, at l = 176, 241 μm [181] and at l = 337 μm was observed [178].…”

Section: Field Effect Transistor Detectorsmentioning

confidence: 98%

THz radiation sensors

Сизов

2010

Opto-Electronics Review

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In the paper, issues associated with the development and exploitation of terahertz (THz) radiation detectors are discussed. The paper is written for those readers who desire an analysis of the latest developments in different type of THz radiation sensors (detectors), which play an increasing role in different areas of human activity (e.g., security, biological, drugs and explosions detection, imaging, astronomy applications, etc.). The basic physical phenomena and the recent progress in both direct and heterodyne detectors are discussed. More details concern Schottky barrier diodes, pair braking detectors, hot electron mixers, and field-effect transistor detectors. Also the operational conditions of THz detectors and their upper performance limits are discussed.

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“…The quenching of photoconduction with increasing temperature or following an application of a strong electric-field pulse was normally attributed to increased probability of electron penetration through the potential barrier. The spectral dependence of photoconduction corresponds to the fundamental absorption band of PbSnTe (band-to-band transitions) (Zasavitskii et al, 1986); nonetheless, photoconduction around wavelengths 115 m and 220 m (Romcevic et al, 1991), and also in extended wavelength regions 100 to 200 and around 336 m, was also reported (Khokhlov et al, 2000;Akimov et al, 2006;Klimov et al, 2007). In a certain range of applied electric field and illumination intensities, current selfoscillations were observed in PbSnTe (Akimov et al, 1993;Borodin et al, 1997a), which until recently were given no exhaustive explanation.…”

Section: Introductionmentioning

confidence: 99%