Photostability of pulsed-laser-deposited As_xTe_100-x (x=40, 50, 60) amorphous thin films

Abstract

As_xTe_100-x amorphous thin films were fabricated by a pulsed laser deposition technique with the aim of finding photostable layers in as-deposited but preferably in relaxed (annealed) state. Photostability was studied in terms of the films' stability of refractive index and bandgap under near-bandgap light irradiation. As₄₀Te₆₀ and As₅₀Te₅₀ layers were found to be photostable in both as-deposited as well as relaxed states. Moreover, As₅₀Te₅₀ layers present the lowest surface roughness. These characteristics make pulsed-laser-deposited As₅₀Te₅₀ thin films promising for applications in nonlinear optics.

Near resonant nanosecond laser-driven nonlinear optical response in As50S50 thin films

“…within 2%-3%. We prepared film with thickness of ~420 nm, which was verified by using ellipsometric measurements [18]. X-ray diffraction measurements further indicate that the sample is amorphous in nature.…”

“…We have later performed EDAX and confirmed the uniformity of composition is within the experimental error of this technique, i.e., within 2-3%. We prepared film of thickness ~ 420 nm which was verified by using ellipsometric measurements [18]. X-ray diffraction (XRD) measurements further indicates that the sample is amorphous in nature.…”

Large (GeTe):(Sb2Te3) ratio phase change memory thin films

“…Advantages of PLD concern mainly its simplicity, easy process control, high deposition rate, and often stoichiometric transfer of the material to the films [23][24][25] . Our group already reported applicability of PLD for fabrication of different chalcogenide thin films [26][27][28][29] .…”