Photostructural transformations in amorphous chalkogenide nanolayered films produced by thermal vapour deposition

Imre, Attila R.; Fedor, V.; Kis-Varga, M.; Mishak, Alexander; Shipljak, M.

doi:10.1016/s0042-207x(98)00091-8

Cited by 8 publications

(7 citation statements)

References 6 publications

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Section: Methodsmentioning

confidence: 99%

“…8 As 6 Se 94 /Se x Te 1-x AML (0.6 < x < 0.9), with total thickness up to 0.8-2.0 µm and modulation period of Λ = 5-8 nm, were deposited by cyclic thermal evaporation in vacuum onto the same type of substrata. 16 Besides Si/Ge the chalcogenide system with Se 80 Te 20 "well" layers were selected as most suitable for measurements at the given conditions (time domain of expositions; measurements at optimal absorption of He-Ne laser light with λ = 0.63 µm; stability to crystallization). Small Angle X-Ray Diffraction (SAXRD) was used to investigate the periodicity and the quality of interfaces.…”

Section: Methodsmentioning

confidence: 99%

“…The SAXRD method was also used for the investigations of interdiffusion. 6,8,16 The change of the optical transmission, τ, (focused He-Ne laser beam of 0.2 mm in diameter, P = 0.03-30 W/cm 2 density of surface intensity and λ = 0.63 µm) with illumination time t was measured in situ in a special cryostat at temperatures between 100 K and 300 K. Ar-ion laser was also used for illuminate the chalcogenide samples. Measurements of τ, at the same λ but with a small intensity beam, were also carried out on samples previously annealed at different fixed temperatures between 350-500 K, and the results were compared with those of the SAXRD measurements.…”

Section: Methodsmentioning

confidence: 99%

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Laser-induced optical changes in amorphous multilayers

Malyovanik

Ivan

Csík

et al. 2003

Journal of Applied Physics

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It is shown that the well-known blue-shift of the fundamental absorption edge in as-deposited compositionally modulated amorphous Si/Ge and As 6 Se 94 /Se 80 Te 20 multilayers (with periods of 4-8 nm) is further enhanced due to the thermal or laser-induced intermixing of adjacent layers.The laser-induced intermixing process, as supported by experiments and model calculations, can be attributed to both the local heating and photo-effects in As 6 Se 94 /Se 80 Te 20 multilayers, while only the thermal effects were observed for Si/Ge multilayers. Structural transformations, based on this enhanced interdiffusion, provides good capability for spatially patterning optoelectronic devices and digital information recording. a) Corresponding author.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Laser-induced optical changes in amorphous multilayers

Malyovanik

Ivan

Csík

et al. 2003

Journal of Applied Physics

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“…What makes them different is the interdiffusion between the adjacent layers occurring due to light absorption [4]. Such light-induced intermixing has been observed experimentally in nanomultilayers of different compositions, such as in Se/As 2 S 3 [5], As 0.2 Se 0.8 /As 0.2 S 0.8 [4], and in Se x Te 1Àx /As 2 S 3 [6] systems. During intermixing, the well-layer (the layer with narrow band gap) gradually disappears, the sample becomes more transparent, i.e.…”

Section: Introductionmentioning

confidence: 99%

Effect of pressure on photo-induced interdiffusion in amorphous chalcogenide nanomultilayers

Iván

Erdélyi

Kökényesi

et al. 2006

Journal of Non-Crystalline Solids

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“…SAXRD method was also used for the investigations of interdiffusion [9,10] taking place during heat treatments and illumination. In situ monitoring of the change of the optical transmission, τ, (focused He-Ne laser beam with diameter 0.2 mm, density of surface intensity P = 0.03-30 W/cm 2 , λ = 0.63 µm) with illumination time t was performed.…”

mentioning

confidence: 99%

Stimulated structural transformations in amorphous semiconductor multilayers

Beke

Csík

Kökényesi

et al. 2003

phys. stat. sol. (c)

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PACS 42.70.Ln, 68.65.Ac Structural transformations, stimulated by illumination or heating are related to the interdiffusion processes in nanolayered structures, which were prepared by cyclic thermal evaporation or magnetron sputtering from Si, Ge, Se semiconductors and some As 2 S 3 , Se x Te 1-x -type chalcogenide glasses. It is shown that the intermixing velocity and the related changes of optical parameters depend on the period of the multilayer and intensity of illumination. Volume extension can be stimulated at the illuminated regions and used for the surface relief formation.Introduction The nano-scale technologies provide new possibilities of creating materials and devices with peculiar characteristics for micro-and optoelectronics. Stability of nanostructured systems strongly depends on the interdiffusion processes, which in turn can be used for solid-state synthesis of multicomponent materials, optical recording [1,2]. Compositionally modulated multilayers are attractive for these purposes because of the rather simple technology and modeling of physical processes. Amorphous multilayers (AML) are of special interest due to the elimination of the misfit problems, but the explanation of some physical effects, for example quantum confinement, blue shift of the absorption edge, diffusion on nano-scale are rather indefinite up today [3,4]. Investigations of the well-known photo-stimulated structural transformations (PST) in amorphous chalcogenide semiconductor films [5,6] were extended to the nanolayered systems [4,7] and gave a new insight to the mechanism of light-stimulated structural transformations within sensitive amorphous sub-layers of AML. Light-stimulated interdiffusion processes are possible in Si, Ge as well as in Se and chalcogenide-glass containing AML [8]. These can be used for amplitude-phase optical recording due to the changes of optical transmission, reflection and refraction index in the illuminated region of the AML. Surface reliefs also can be produced due to the deviation from Vegard's law in intermixed systems [1,8]. Stimulated intermixing depends on the temperature and the intensity of illumination, which also can heat up the layer. A model of surface relief formation due to the interdiffusion and the influence of illumination intensity on the amplitude recording process in three typical AMLs (a-Se/As 2 S 3 , As 6 Se 94 /Se 80 Te 20 , a-Si/Ge) are discussed in this paper.

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Photostructural transformations in amorphous chalkogenide nanolayered films produced by thermal vapour deposition

Cited by 8 publications

References 6 publications

Laser-induced optical changes in amorphous multilayers

Laser-induced optical changes in amorphous multilayers

Effect of pressure on photo-induced interdiffusion in amorphous chalcogenide nanomultilayers

Stimulated structural transformations in amorphous semiconductor multilayers

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