Abstract:The dielectric thin-film coating on high-power optical components is often the weakest region and will fail at elevated optical fluences. A comparison of single-layer coatings of ZrO 2 , LiF, Ta 2 O 5 , SiN, and SiO 2 along with anti-reflection (AR) coatings optimized at 1064 nm comprised of ZrO 2 and Ta 2 O 5 was made, and the results of photothermal common-path interferometry (PCI) and a laser-induced damage threshold (LIDT) are presented here. The coatings were grown by radio frequency (RF) sputtering, pulsed direct-current (DC) sputtering, ion-assisted electron beam evaporation (IAD), and thermal evaporation. Test regimes for LIDT used pulse durations of 9.6 ns at 100 Hz for 1000-on-1 and 1-on-1 regimes at 1064 nm for single-layer and AR coatings, and 20 ns at 20 Hz for a 200-on-1 regime to compare the //ZrO 2 /SiO 2 AR coating.