Photothermal, Photocarrier and Raman Characterization of Te-doped GaSb

Velázquez-Hernández, R.; García-Rivera, J.; Rodríguez‐García, Mario E.; Sandoval, Sergio; Mendoza-Álvarez, J.G.; García, José Antonio Tornero

doi:10.1063/1.2409765

Cited by 11 publications

(8 citation statements)

References 16 publications

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“…The methodology employed to obtain the PCR amplitude and phase images of the samples was recently reported [12]. The PCR images were generated by moving two micro-stages in the x-y direction.…”

Section: Characterizationmentioning

confidence: 99%

“…These images were taken at a modulation frequency of 10 kHz which showed favorable signal contrast. A schematic diagram of the PCR system used to perform the measurements on the sample has been reported elsewhere [12]. An intensity-modulated diode laser, 532 nm, was used as the excitation source.…”

Section: Characterizationmentioning

confidence: 99%

“…Photocarrier radiometry is a noncontact and non-intrusive technique used to characterize semiconductor materials. Velazquez-Hernandez et al [12] reported a methodology to obtain thermoelectronic images of GaSb doped with Te semiconductor wafers by using PCR. However, in the case of II-VI semiconductor materials, there is no current information related to the characterization of these materials by using photothermal or photoacarrier techniques.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical, Structural, and Photocarrier Studies of Cu x (CdTe) y O z Thin Films

Velázquez-Hernández

Rojas-Rodriguez²,

Carmona-Rodriguez³

et al. 2011

Int J Thermophys

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In this research quaternary alloy thin films made of Cu, CdTe, and O have been grown and characterized. The samples used in this investigation were grown simultaneously by reactive RF co-sputtering and by introducing oxygen and argon in the chamber during growth and changing the power in the Cu target from 10 W to 50 W. The carrier distribution as a function of the position was studied by using energy dispersive spectroscopy-scanning electronic microscopy (EDS-SEM), micro-Raman spectroscopy, and photocarrier images. Structural characterization was carried out by using X-ray diffraction. According to the results, a lateral carrier distribution was found in all samples and a new phase identified as Cu 2 Te was revealed for samples grown at 50 W.

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Section: Characterizationmentioning

confidence: 99%

Section: Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical, Structural, and Photocarrier Studies of Cu x (CdTe) y O z Thin Films

Velázquez-Hernández

Rojas-Rodriguez²,

Carmona-Rodriguez³

et al. 2011

Int J Thermophys

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“…The control of the doping distribution across low-doped n-type wafers is extremely challenging and a subject of recent studies. The crystalline quality and the optical and electronic properties of Te-doped GaSb had been characterized using different characterization techniques, such as infrared transmission [4,5,6], Hall measurements [7], photothermal radiometry and Raman spectroscopy [8] and others.…”

Section: Introductionmentioning

confidence: 99%

Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications

et al. 2016

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Epi-ready GaSb wafers with low absorption coefficients are of a special interest as substrates for molecular beam epitaxy (MBE) growth of material for IR focal plane arrays that operate under back-side illumination configuration, when the substrate is not completely removed. While low absorption coefficient across a broad IR spectral range (~2um-20um) is achievable in GaSb crystals with low Te doping, the control of the doping distribution across the wafers is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb wafers. In this work, we examine data from the n-type and p-type Te-doped GaSb samples with doping concentration below 1e18 cm-3. The carrier concentration measured by the Hall and the transmission data measured by FTIR spectroscopy are correlated. We perform a rigorous analysis of the absorption coefficient based on the free-carrier absorption mechanism that is dominant for the n-type GaSb and the inter-valence band absorption due to the transitions from the light-hole to the heavy-hole band that is the dominant absorption mechanism for the p-type GaSb. Based on the correlation between the Hall and the FTIR data, carrier concentration profile can be estimated from the non-destructive FTIR transmission mapping of the wafer.

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“…Moreover, the distribution of impurities in the semiconductor is an important aspect in the manufacture of integrated circuits. Photo-carrier radiometry (PCR) is a new powerful technique that has been used to obtain different electronic transport parameters such as recombination lifetime, front and back surface recombination velocities, carrier diffusion coefficient [1,2], and the distribution of the impurities on semiconductor wafers [3]. Unlike other photothermal techniques like photothermal radiometry (PTR) or photo-modulated thermoreflectance (PMOR), PCR is only sensitive to the recombination of free photo-excited carrier density waves [1].…”

Section: Introductionmentioning

confidence: 99%

Photo-carrier and Electronic Studies of Silicon-Doped GaAs Grown by MBE Using PCR

et al. 2010

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Photo-carrier radiometry (PCR) has been used to study the distribution of impurities and the lattice damage in silicon-doped gallium arsenide in a noncontact way. The results from the PCR study are correlated with Hall effect measurements. Samples for this study were grown by molecular beam epitaxy. Of all possible parameters that can be manipulated, the silicon effusion cell temperature was the only one that was varied, in order to obtain samples with different silicon concentrations. The distribution of impurities was obtained by scanning the surface of each sample. The PCR amplitude and phase images were obtained as a function of the x-y position. According to the PCR images, it is evident that the impurities are not uniformly distributed across the sample. From these images, the average value of the amplitude and phase data across the surface was obtained for each sample in order to study the PCR signal behavior as a function of the silicon effusion cell temperature.

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Photothermal, Photocarrier and Raman Characterization of Te-doped GaSb

Cited by 11 publications

References 16 publications

Optical, Structural, and Photocarrier Studies of Cu x (CdTe) y O z Thin Films

Optical, Structural, and Photocarrier Studies of Cu x (CdTe) y O z Thin Films

Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications

Photo-carrier and Electronic Studies of Silicon-Doped GaAs Grown by MBE Using PCR

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