Phototunable Biomemory Based on Light‐Mediated Charge Trap

Abstract

Phototunable biomaterial‐based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)‐silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and scanning electron microscopy and energy‐dispersive spectroscopy microanalysis, which demonstrates that the resistive switching behavior of Al, Au anode‐based device are related to the space‐charge‐limited‐conduction, while electrochemical metallization is the main mechanism for resistive transitions of Ag anode‐based devices. Incorporation of CDs with light‐adjustable charge trapping capacity is found to be responsible for phototunable resistive switching properties of CDs‐based resistive random access memory by performing the ultraviolet light illumination studies on as‐fabricated devices. The synergistic effect of photovoltaics and photogating can effectively enhance the internal electrical field to reduce the switching voltage. This demonstration provides a practical route for next‐generation biocompatible electronics.

Silk Flexible Electronics: From Bombyx mori Silk Ag Nanoclusters Hybrid Materials to Mesoscopic Memristors and Synaptic Emulators

“…The significant enhancement in the switching performance of SF memristors after AgNC meso‐functionalization can be understood as follows: as illustrated in Figure b, the switching performance of SF memristors is attributed to the formation and rupture of conductive paths . As shown in Figure S16 in the Supporting Information, the anodic dissolution of Ag occurs according to the reaction Ag→ Ag + + e − when a positive bias is applied to the Ag electrode and Ag ions migrate across the mediating protein layer.…”

Optically Modulated Threshold Switching in Core–Shell Quantum Dot Based Memristive Device

“…The EFM measurement, coupled with KPFM result suggest that the hole concentration of InP/ZnS QD film will increase under light illumination (Figure S14 in the Supporting Information). [ 64–67 ] Then, to theoretically investigate the charge transition mechanism, we adopted a simple model to evaluate the excitation behaviors of electron‐hole pairs in the InP/ZnS QDs. The wavefunctions and eigenenergies of electrons and holes for InP/ZnS core/shell QDs were evaluated by treating them as independent particles confined in spherical wells with finite depth.…”

Recent Advances in Memory Devices with Hybrid Materials

“…This decrease in Schottky barrier caused development of quasi-ohmic contact, which corresponded to LRS. [156] These results suggest a novel structure to realize photonic synapse which is based on OIP quantum dots. This study also showed "OR" logic, and coincidence event detection.…”