Photovoltaic Action With Broadband Photoresponsivity in Germanium-MoS₂Ultrathin Heterojunction

UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS2

“…Due to the I-type heterojunction formed between monolayer MoS 2 and ZnO-QDs, the device exhibits fast response speed, extended broadband photoresponse range (deep UV-visible), enhanced photo absorbance, photoresponse, and detectivity. It is also notable that the responsivity reaches as high as 0.084 A/W under 405-nm light at power density (PD) of 0.073 mW/cm 2 , which is comparable with that of hybrid photodetection at the same wavelength [23, 24]. Thus, our study may provide a method to improve the performance of photodetectors and expand the building blocks for high-performance optoelectronic devices.…”

Visible and infrared dual-band imaging via Ge/MoS2van der Waals heterostructure

“…Figure 1C shows the Raman spectra of the p-Ge/n-MoS 2 photodetector obtained using a 532-nm excitation laser. The results include the bulk Ge peaks and multiple MoS 2 peaks, including E 1 2g , A 1g , and 2LA (longitudinal acoustic) phonon modes ( 18 , 19 ). The area of the p-Ge/n-MoS 2 heterojunction is 28.3 μm 2 (exfoliated 66-nm-thick MoS 2 flake), as verified by atomic force microscopy mapping (see fig.…”

PdSe2 Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

“…While the past decade has witnessed a huge progress in this field, it is undeniable that there remain grand challenges and the practical application of graphene devices is greatly hindered by the absence of inherent bandgap and short photocarrier lifetime . Such dilemma has prompted the materials scientists to search for alternative 2D materials, such as black phosphorus, arsenene, antimonene, black arsenic phosphorus, silicone, and layered transitional metal dichalcogenides (TMDs, such as MoS 2 , MoSe 2 , and MoTe 2 etc.) with a general formula of M X 2 .…”