2011
DOI: 10.1007/978-3-642-19965-3_4
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Photovoltaic Cells

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Cited by 4 publications
(2 citation statements)
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“…To select a PV cell bandgap approximately matched to that emission, an arsenide-doped GaSb PV cell with a bandgap energy of ≈0.75 eV (1.65 μm) is proposed. [36,37] Considering that rare-earth emitters have narrow emission peaks in the IR region, Erbiumdoped Aluminum Garnet (ErAG) is chosen as the substrate to achieve selective emission and reasonable tolerance for oxidizing environments. [8,38] The PV cell is assumed to be positioned on the top side of the emitter.…”
Section: Resultsmentioning
confidence: 99%
“…To select a PV cell bandgap approximately matched to that emission, an arsenide-doped GaSb PV cell with a bandgap energy of ≈0.75 eV (1.65 μm) is proposed. [36,37] Considering that rare-earth emitters have narrow emission peaks in the IR region, Erbiumdoped Aluminum Garnet (ErAG) is chosen as the substrate to achieve selective emission and reasonable tolerance for oxidizing environments. [8,38] The PV cell is assumed to be positioned on the top side of the emitter.…”
Section: Resultsmentioning
confidence: 99%
“…The bandgap for silicon solar cells is 1.12 eV, which is close to the optimal value for a single p-n junction. 82 A theoretical limit for the efficiency of a solar cell and its corresponding bandgap which is around 1.34 eV is given by the Shockley-Queisser limit. 83 Many materials have bandgaps around 1 eV like Gallium Arsenide (GaAs), Silicon (Si), Cadmium Telluride (CdTe), perovskites, etc.…”
Section: Applicationsmentioning
confidence: 99%