Photovoltaic cells technology: principles and recent developments

Bahrami, Ali; Mohammadnejad, Shahram; Soleimaninezhad, Saeede

doi:10.1007/s11082-012-9613-9

Cited by 60 publications

(25 citation statements)

References 172 publications

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“…Improving the performance efficiency is one of the major challenges in the design and implementation of the solar cells (López et al 2012;Bahrami et al 2013). One technique used to increase the cell efficiency is to linearly grading band gap of the active layer of the cell (Sun et al 2012).…”

Section: Introductionmentioning

confidence: 99%

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Rezaie

Kosarian

2015

Opt Quant Electron

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Solar conversion efficiency of graded Cd 1-x Zn x Te solar cells is investigated numerically in this work. It is found that the efficiency can be improved if a p-Cd 0.6 Zn 0.4 Te layer is added to the basic n-ZnO/n-CdS/p-CdTe structure. On the other hand, there is a sharp conduction band offset at the interface of the CdTe and p-Cd 0.6 Zn 0.4 Te layer that affects the cell performance. At the next step, in order to remove the discontinuity at the conduction band between p-CdTe and p-Cd 0.6 Zn 0.4 Te, we have replaced the Cd 1-x Zn x Te with a graded region where the Cd 1-x Zn x Te layer is divided into several individual thinner layers. As a result, the electron (minority carrier) collection at the hetero-interface improves, duo to the establishment of an extra electric field across the graded region, leading to an increase in the solar conversion efficiency. The number of layers and doping concentration of the graded region plays an important role in the performance of the cell. Finally, it had been found that the ZnO/CdS/CdTe/Cd 1-x Zn x Te/p-Cd 0.6 Zn 0.4 Te structure in which the Cd 1-x Zn x Te region consists of 25 thin layers with 10 18 cm -3 doping concentration will have an efficiency &1 % higher than that of the ungraded ZnO/CdS/CdTe structure.

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Section: Introductionmentioning

confidence: 99%

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Rezaie

Kosarian

2015

Opt Quant Electron

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“…DLARC for silicon solar cell surfaces was proved to be satisfactory [11]. Thus, it is possible to have a broadband almost at zero reflection in our region of interest (400-1100 nm).…”

Section: The Matrix Methods In Dlarc Designmentioning

confidence: 79%

Enhancing silicon solar cell efficiency with double layer antireflection coating

Medhat¹,

El-Zaiat²,

Farag³

et al. 2016

Turk J Phys

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Antireflection coating on silicon, a high refractive index substrate, was theoretically investigated. The effects of antireflection coating on electrical parameters such as the short circuit current, open circuit voltage, maximum current density, maximum voltage, maximum power, power density, and conversion efficiency of the solar cell were simulated. Various previous works in which solar cell efficiencies were investigated after applying double layer antireflection coating (DLARC) were reviewed. Ti 2 O 3 and MgF 2 were then applied in a DLARC design, taking into consideration the refractive index dispersion of the two materials. The results were compared with other works in the solar spectral range (400-1200 nm). As a result of simulation, the reflectance on the surface was reduced from 30.2% to 2.37%. Moreover, about 22% conversion efficiency and 38.6 mA/ cm 2 short circuit current density were achieved for a silicon cell with DLARC. These results were compared with the parameters of a cell without coating, one with single layer coating, and one with zero reflectance on the front surface.

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“…(Mazinov et al 2012). To achieve this objective it is necessary to solve some problems related with the understanding of the processes in the matrix of the material and producing the structures with optimal parameters (Bahrami et al 2013;Olibet et al 2007;De Wolf et al 2008).…”

Section: Introductionmentioning

confidence: 99%

The offset of the quantum interband transitions in non-crystalline semiconductors

Mazinov

Shevchenko

2014

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The paper proposes an approach to the description of non-crystalline semiconductors, which are promising materials in solar photovoltaic industry. We describe the optical wave interaction with film structure that has an amorphous solid state, its thickness being about 100 nanometers. The edge's fundamental absorption displacements in semiconductors with the introduction of defects into the periodic lattice have been explained by comparing the crystalline and amorphous material. Averaged experimental data have been compared with the proposed description of the absorption coefficient in single-crystal and amorphous silicon. Optical band gap expansion in silicon, which leads to the absorption spectrum shift from 1.12 to 1.6 eV, has been shown and described.

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Photovoltaic cells technology: principles and recent developments

Cited by 60 publications

References 172 publications

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Enhancing silicon solar cell efficiency with double layer antireflection coating

The offset of the quantum interband transitions in non-crystalline semiconductors

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