Photovoltaic characteristics and computational simulation of samarium-ion doped Cu(In, Ga)Se2 thin films prepared via a non-vacuum coating process

Ou, Chang-Ying; Som, Sudipta; Lu, Chung‐Hsin; Gupta, Karan Kumar; Chaurasiya, Rajneesh

doi:10.1016/j.jallcom.2021.160377

Cited by 5 publications

(1 citation statement)

References 46 publications

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“…lower substrate temperature, nonvacuum) since they permit a shorter minority diffusion length, which can further reduce the manufacturing. [8][9][10][11] However, their efficiencies are heavily restrained with a loss of more than 6% (abs.) than their thick counterparts.…”

Section: Introductionmentioning

confidence: 99%

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Yin

2023

Chinese Phys. B

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Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier (Eh>0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness, the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous. The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.

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Section: Introductionmentioning

confidence: 99%

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Yin

2023

Chinese Phys. B

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Rare-earth-activated phosphors for TL dosimetry applications

Parauha

Dhoble

2022

Rare-Earth-Activated Phosphors

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Upconversion luminescence behavior of rare-earth-activated phosphors

Gupta

Som

et al. 2022

Rare-Earth-Activated Phosphors

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Photovoltaic characteristics and computational simulation of samarium-ion doped Cu(In, Ga)Se2 thin films prepared via a non-vacuum coating process

Cited by 5 publications

References 46 publications

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Rare-earth-activated phosphors for TL dosimetry applications

Upconversion luminescence behavior of rare-earth-activated phosphors

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Photovoltaic characteristics and computational simulation of samarium-ion doped Cu(In, Ga)Se2 thin films prepared via a non-vacuum coating process

Cited by 5 publications

References 46 publications

Back interface passivation for ultrathin Cu(In,Ga)Se2 solar cells with Schottky back contact: A trade-off of electrical effects

Back interface passivation for ultrathin Cu(In,Ga)Se2 solar cells with Schottky back contact: A trade-off of electrical effects

Rare-earth-activated phosphors for TL dosimetry applications

Upconversion luminescence behavior of rare-earth-activated phosphors

Contact Info

Product

Resources

About

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects

Back interface passivation for ultrathin Cu(In,Ga)Se₂ solar cells with Schottky back contact: A trade-off of electrical effects