Photovoltaic Detectors in MCT

Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures

“…10. Here are plotted data for R 0 A versus cutoff wavelength for three groups of backside-illuminated HgCdTe photodiodes: MBE, LPE and MOCVD devices at 295 K and 180 K. 3 At their respective temperatures, For all devices, the R 0 A product is limited by diffusion current, as determined both by the temperature dependence of R 0 A as well as by the shape of the current-voltage characteristics. The curves in Fig.…”

“…[2][3][4][5] Initially, the photodiodes were prepared from bulk materials, which performance were next considerably improved. Further development was, however, dominated by various epitaxial techniques including liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD).…”

A review of advances in EO/IR focal plane array technology for space system applications

“…HgCdTe has the ability to operate in a broad wavelength region of the infrared spectrum. It is a flexible alloy material suited for very low temperature of operation (40K) as well as for intermediate temperature of operation (~ 230K) [5]. Advances made to-date in the material growth and processing technology of this material have contributed to the improvement in its performance as a detector.…”

HgCdTe infrared detectors: historical prospect

“…For this reason, the development of HgCdTe MIS detector was abandoned around 1987. 15,16 The time evolution of HgCdTe detector development is illustrated in Fig. 7.…”