Photovoltaic device applications of porous microcrystalline silicon

Duttagupta, S. P.; Fauchet, Philippe M.; Ribes, A. C.; Tiedje, H.F.; Damaskinos, Savvas; Dixon, Ted; Brodie, Douglas; Kurinec, Santosh

doi:10.1016/s0927-0248(97)00280-8

Cited by 14 publications

(4 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increase in the photocurrent indicates higher short-circuit current and higher conversion efficiency will be obtained by application of the TLPS structures. At a reverse bias of 5 V, the TLPS device has about one-order higher photocurrent than that of one based on a single LP-PS layer with porosity of 40%, which was applied as the surface film in a Si-based solar cell to achieve optimum device performance [ 8 ]. That imply that the TLPS structures have good potential to improve the performance of a Si-based photovoltaic device.…”

Section: Resultsmentioning

confidence: 99%

“…In most of the related research, PS films acted as the surface texturing and anti-reflection (AR) layers to reduce the light-reflection losses or as the surface passivation layers to decrease surface carrier recombination velocity. On the other hand, PS can potentially serve as the parts of the active layer to effectively generate photo-induced carriers because of its wide energy bandgap and high photoconduction in response to solar irradiation [ 8 , 9 ]. However, a primary drawback of PS for use of the light-absorption layer in a photovoltaic device is its comparatively narrow spectral photoresponses.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

2015

Materials

View full text Add to dashboard Cite

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

2015

Materials

View full text Add to dashboard Cite

show abstract

“…The FTIR spectra of PSi samples are shown in Figure ( 6) FTIR spectra of Si bulk for (111), whereas Figure ( 7) FTIR shows a PSi sample with current density 10, 20 and 40 mA/cm 2 sequential at etching time 20 min , HF 15%, and HF 30% for (100). Moreover, Figure (8) shows FTIR spectra for PSi sample with HF15% at etching time 20min and current density 10 mA/cm 2 for (100) and (111) of transmittance peak IR and chemical [32].…”

Section: Chemical Properties Of Psimentioning

confidence: 99%

“…In 1997, Smith et al [7] reported a blue shift in metal/PSi/c-Si structures compared to that of c-Si based photodetectors. Then, the rapid thermal oxidation method was used to develop a high-gain photodetector of PS planar metal-semiconductormetal by Duttagupta in 1998 [8]. Moreover, Coulthard et al in 2000 [9] prepared PS samples by electrochemical etching and then studied the PL of the PSi samples using a synchrotron as a tuneable excitation source.…”

Section: Introductionmentioning

confidence: 99%

An Overview of the Evolution of the Porous Silicon material: A review

Ali¹,

Younus²,

Karomi³

2020

J.Edu.Sci.

View full text Add to dashboard Cite

Recently, the properties and applications of porous has become the main subject of a vast numbers of books and review articles. Porous silicon has demonstrated significant versatility and promise for a wide range of optoelectronic applications due to its large surface area and intense photoluminescence at room temperature. In this review, we describe the fabrication techniques and experimental improvements made towards porous silicon (PSi) and we provide a full picture of realization and characterization of this material. We also highlight its important chemical, structure and surface properties. Additionally, we will introduced the techniques that have been used to characterize porouse silicon, including Fourier transform infrared spectroscopy, X-ray diffraction measurements, atomic force microscope images (AFM) and a scanning probe microscope (SEM). Moreover, the effect of the current density and etching time are also documented in this review. In summary, porous silicon has undergone vast improvement in both fabrication and characterization methods, which makes it an attractive modern material.

show abstract

Porous‐etched Semiconductors: Formation and Characterization

Kelly¹,

Vanrnaekelbergh²

2001

Electrochemistry of Nanomaterials

View full text Add to dashboard Cite

In this chapter we review the porous etching of a range of crystalline semiconductors including Si, Ti02 and IV-IV, 111-V and 11-VI materials. Mechanisms are considered for a number of electrochemical methods such as (photo)anodic dissolution, electroless etching and photoetching. The photoelectrochemical characterization of these and other porous electrodes is described. Some applications of porous-etched semiconductors are considered. 4.1The nature of the products depends on the solution composition and the etching conditions [ 131. I 107 I 1241. 276, 123.

show abstract

Photovoltaic device applications of porous microcrystalline silicon

Cited by 14 publications

References 26 publications

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

An Overview of the Evolution of the Porous Silicon material: A review

Porous‐etched Semiconductors: Formation and Characterization

Contact Info

Product

Resources

About