Photovoltaic enhancement by Au surface-plasmon effect for La doped BiFeO<sub>3</sub> films

Li, F. Z.; Zheng, He‐Gen; Zhu, Mingyao; Zhang, X. A.; Yuan, Guoliang; Xie, Zhongshuai; Li, X. H.; Yue, Gentian; Zhang, W. F.

doi:10.1039/c7tc03371k

Cited by 54 publications

(26 citation statements)

References 54 publications

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“…In fact, we could simply estimate the Schottky barrier height of BFO with different metal electrodes on the basis of the metal-induced-gap-state model just calculating the difference between the work function of the metal and the electron affinity of BFO. The work functions of Au and FTO (Φ Au , Φ FTO ) are about 5.1 and 4.4 eV, respectively . The electron affinity of BFO (χ BFO ) is estimated as 3.3 eV.…”

Section: Resultsmentioning

confidence: 88%

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Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Yang

Wei

Guo

et al. 2019

ACS Appl. Mater. Interfaces

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Very recently, the ferroelectric photovoltaic property of bismuth ferrite (BiFeO3, BFO) has attracted much attention. However, the physical mechanisms for its anomalous photovoltaic effect and switchable photovoltaic effect are still largely unclear. Herein, a novel design was proposed to realize a high photovoltaic output in BiFeO3 films by manipulating its oxygen vacancy concentration through the alteration of the Bi content. Subsequent results and analysis manifested that the highest photovoltaic output was achieved in Bi1.05FeO3 films, differing 1000 times from that of Bi0.95FeO3 films. Simultaneously, the origin of photovoltaic effect in all BiFeO3 films was suggested as the bulk photovoltaic mechanism instead of the Schottky effect. Moreover, oxygen vacancy migration should be the dominant factor determining the switchable photovoltaic effect rather than the ferroelectric polarization. A switchable Schottky-to-Ohmic interfacial contact model was proposed to illustrate the observed switchable photovoltaic or diodelike effect. Therefore, the present work may open a new way to realize the high power output and controllable photovoltaic switching behavior for the photovoltaic applications of BiFeO3 compounds.

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Section: Resultsmentioning

confidence: 88%

“…The work functions of Au and FTO (Φ Au , Φ FTO ) are about 5.1 and 4.4 eV, respectively. 62 The electron affinity of BFO (χ BFO ) is estimated as 3. Apparently, the effect of this Schottky barrier imbalance can be ruled out in our samples.…”

Section: Piezo Force Microscopy (Pfm)mentioning

confidence: 99%

Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Yang

Wei

Guo

et al. 2019

ACS Appl. Mater. Interfaces

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“…The corresponding calculated values of E g for the BLFO film and ZnO are estimated to be ∼2.63 and 3.26 eV, respectively. which are in good agreement with previous reports. ,, Consequently, the electron–hole pairs are mainly obtained in the BLFO film when the BLFO/ZnO heterojunction was irradiated by a 405 nm laser. In addition, the X-ray diffraction (XRD) spectra were measured to identify the composition of BLFO film and ZnO nanowires (Figure b), from which the reflection peaks of FTO substrate are labeled by a star.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Photovoltaic Performances of La-Doped Bismuth Ferrite/Zinc Oxide Heterojunction by Coupling Piezo-Phototronic Effect and Ferroelectricity

et al. 2020

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Ferroelectric materials have drawn widespread attention due to their switchable spontaneous polarization and anomalous photovoltaic effect. The coupling between ferroelectricity and the piezo-phototronic effect may lead to the design of distinctive photoelectric devices with multifunctional features. Here, we report an enhancement of the photovoltaic performances in the ferroelectric p-type La-doped bismuth ferrite film (BLFO)/n-type zinc oxide (ZnO) nanowire array heterojunction by rationally coupling the strain-induced piezoelectricity in ZnO nanowires and the ferroelectricity in BLFO. Under a compressive strain of −2.3% and a 10 V upward poling of the BLFO, the open-circuit voltage (V OC) and short-circuit current density (J SC) of the device increase by 8.4% and 54.7%, respectively. Meanwhile, the rise (/decay) time is modulated from 153.7 (/108.8) to 61.28 (/74.86) ms. Systematical band diagram analysis reveals that the promotion of photogenerated carriers and boost of the photovoltaic performances of the device can be attributed to the modulated carrier transport behaviors at the BLFO/ZnO interface and the superposed driving forces arising from the adding up of the piezoelectric potential and ferroelectric polarization. In addition, COMSOL simulation results of piezopotential distribution in ZnO nanowire arrays and the energy band structure change of the heterojunction further confirm the mechanisms. This work not only presents an approach to design high-performance ferroelectric photovoltaic devices but also further broadens the research scope of piezo-phototronics.

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“…In contrast, chemical solution deposition with a variable film structure and low cost is easier to generalize. At present, many researchers have improved the photovoltaic effect of BFO through doping and made some progress. − In addition, there are methods such as forming a heterojunction by the combination of graphene with BFO, and modifying BFO with a precious metal to improve the photovoltaic response . These methods all improve the photovoltaic effect by modifying the BFO itself, but there are few reports on enhancing the separation of electron–hole pairs through a multilayer structure.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Adjustable Photovoltaic Response in Multilayer BiFeO₃ Films

Yao

Liu

Zhang

et al. 2019

ACS Sustainable Chem. Eng.

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In this paper, the photovoltaic effect of BiFeO 3 (BFO) film prepared by spin-coating was investigated. The photovoltaic effect of the multilayer BFO film is significantly enhanced compared to the single layer BFO film. The short-circuit current density increases to 62.6 μA/cm 2 while the open-circuit voltage is 0.29 V, which is due to the efficient transport of carriers by the electron transport layer and the hole transport layer in the multilayer film structure. In addition, it is also possible to control the photovoltaic effect of BFO film by applying an external electric field, and a possible mechanism model is proposed to explain this phenomenon. This work found a simple way to enhance the photovoltaic effect of BFO and also achieved precise control of the BFO film photovoltaic effect.

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Photovoltaic enhancement by Au surface-plasmon effect for La doped BiFeO₃ films

Abstract: Herein, the photovoltaic (PV) effect of ferroelectric Bi0.85La0.15FeO3 (BLFO) films fabricated through a sol–gel method is investigated.

Cited by 54 publications

References 54 publications

Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Enhanced Photovoltaic Performances of La-Doped Bismuth Ferrite/Zinc Oxide Heterojunction by Coupling Piezo-Phototronic Effect and Ferroelectricity

Enhanced Adjustable Photovoltaic Response in Multilayer BiFeO₃ Films

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Photovoltaic enhancement by Au surface-plasmon effect for La doped BiFeO3 films

Abstract: Herein, the photovoltaic (PV) effect of ferroelectric Bi0.85La0.15FeO3 (BLFO) films fabricated through a sol–gel method is investigated.

Cited by 54 publications

References 54 publications

Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Enhanced Photovoltaic Performances of La-Doped Bismuth Ferrite/Zinc Oxide Heterojunction by Coupling Piezo-Phototronic Effect and Ferroelectricity

Enhanced Adjustable Photovoltaic Response in Multilayer BiFeO3 Films

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Photovoltaic enhancement by Au surface-plasmon effect for La doped BiFeO₃ films

Enhanced Adjustable Photovoltaic Response in Multilayer BiFeO₃ Films