Photovoltaic-FET for optoelectronic RF/μwave switching

Sun, Chen; Nguyen, R.; Chang, C.T.; Albares, D. J.

doi:10.1109/22.538971

Cited by 13 publications

(6 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a compromise, the value of the shunt load resistor is chosen to be 1 M Both the rise and fall times decrease with a decrease in the total capacitance, and so, going to smaller PV arrays ensures faster transient response. The smaller junction capacitance of the miniature GaAs PV arrays is the reason why the transient times reported here are faster than those in [19].…”

Section: Transient Response Of the Ovc'scontrasting

confidence: 45%

“…The rise and fall times for the array output voltage were measured to be 0.5 and 1.7 s, respectively. As discussed in [19] and [31], the rise time is determined by the time it takes the photocurrent to charge up the junction capacitance Since the photocurrent scales linearly with incident optical power, higher optical powers result in faster rise times. The fall time on the other hand is independent of optical power and is determined by the time required to discharge the junction capacitance through the dc-load resistor Hence, smaller values of the dc-load resistor help speed up the fall time.…”

Section: Transient Response Of the Ovc'smentioning

confidence: 99%

“…Optical fibers do not perturb the antenna fields significantly, since they are made of lowpermittivity dielectric materials. Indirect optical control is ideal for such applications and bias-free optical control of FET's [19], varactor diodes [18], and p-i-n diodes [20] has been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Indirect optical control of microwave circuits using monolithic optically variable capacitors

Nafra

Jerphagnon

Chavarkar

et al. 1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

In this paper, we present an integrated circuit technology suitable for low-power bias-free optical control of microwave circuits and antennas. We have integrated miniature photovoltaic arrays with varactor diodes and thin-film resistors to form monolithic optically variable capacitors (OVC's). For the monolithic OVC described here, only 1.5 mW of optical power was required for more than 2 : 1 change in capacitance (0.9-0.4 pF). Optically controlled microwave circuits such as X-band analog phase shifters and tunable notch filters, which incorporated the monolithic OVC as the control element, were fabricated to demonstrate the potential of this technology.

show abstract

Section: Transient Response Of the Ovc'scontrasting

confidence: 45%

Section: Transient Response Of the Ovc'smentioning

confidence: 99%

See 1 more Smart Citation

Indirect optical control of microwave circuits using monolithic optically variable capacitors

Nafra

Jerphagnon

Chavarkar

et al. 1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…Another approach to design the optically-controlled microwave circuits is to use two coupled semiconductor devices, when the first one is photosensitive, and the second one is controlled. The examples of such a solution are the following devices couples: PIN photodiode-varactor diode -by Szczepaniak and Galwas (2), photovoltaic cell-varactor diode, by Nagra et al (3), photovoltaic cell-FET -Sun et al (4). An alternative approach is to design and made the semiconductor device which parameters can be optically changed.…”

Section: Introductionmentioning

confidence: 99%

Optically-Switched Microwave Filter with the Use of Photovaractors in Self-Bias Mode

Szczepaniak

Galwas

Малышев

2001

31st European Microwave Conference, 2001

View full text Add to dashboard Cite

show abstract

“…After considering the FET switch controlled by voltage from a photovoltaic (PV) cell (PV-FET) (Sun et al, 1996;Albares et al, 1999), we chose two other OE PIN-diode switches for this work: (1) the PIN-diode switch controlled by the PV cell (PV-PIN) , and (2) the photoinjection back-to-back PIN switch (PIPINS) (Sun et al, 1997;Sun, Nguyen, and Albares, 1998;Sun et al, 1998). These switches are called optical PIN-diode switches (OPDS).…”

Section: Introductionmentioning

confidence: 99%

Optically Controlled Pin-Diode RF Switching for Tactical Signal Intelligence Technology

Jacobs¹,

Sun²,

Nguyen³

et al. 2001

Self Cite

View full text Add to dashboard Cite

The Tactical Signal Intelligence (SIGINT) Technology (TST) program objective was to develop optically controlled PIN-diode radio frequency (RF) switches and demonstrate their feasibility to enhance electromagnetic interference (EMI) immunity, sensitivity, speed, and reliability in front-end SIGINT systems. APPROACHProject members performed the following tasks to reach the project objective:• Surveyed, analyzed, and selected U.S. Army, Air Force, and Navy SIGINT systems for optoelectronic (OE) switch development goals.• Developed switch circuit designs for these applications.• Developed switch technology to implement these designs and to assess its present performance and limitations.• Demonstrated feasibility in the laboratory and in SIGINT system equipment where possible. RESULTSThe TST Program developed optically controlled PIN-diode-based RF switches for potential TST applications. Applications included EMI immunity, bias-free operation, switching speed, low noise, power handling, and reliability. A U.S. Air Force Common Aperture RF (CARF) and a U.S. Army tactical jammer (TACJAM) system provided performance goals. CARF featured very high ON-OFF ratios at X-band. These ON-OFF ratios were provided by current mechanical switches. TACJAM featured high RF power handling and isolation. For these applications, the TST Program designed, built, and tested switch circuits based upon the photovoltaic (PV)-PIN switch and the PIPINS. For the CARF case, a PV-PIN circuit yielded suitable isolation, but not insertion loss. The shortfall was caused by inherent semiconductor-based switch properties and microwave packaging techniques. For the TACJAM case, which used a T/R switch, the PIPINS circuit reached the performance goals up to 100-W cw (instrument-limited). Single PIPINS later handled 200-W cw in cold switching (instrument-limited) and 175-W cw in hot switching.The TST Program studied the potential advantages of SIGINT applications for three Services. These applications guided OE switch development. The U.S. Air Force CARF X-band bypass switch and the U.S. Navy Combat Direction Finding (CDF) very high frequency/ultra high frequency (VHF/UHF) commutating antenna feed switch were typical examples of low-power, receive, and RF switching applications. High-power RF switching applications were exemplified in the Army (and Marine Corps) TACJAM VHF/UHF T/R switch. The optical PIN diode switches (OPDS) program accomplished the following tasks:• Analyzed optical PIN diode switches. The PV-PIN switch (figure 1) is based upon conventional OPDS concepts for TST.

show abstract

Photovoltaic-FET for optoelectronic RF/μwave switching

Cited by 13 publications

References 13 publications

Indirect optical control of microwave circuits using monolithic optically variable capacitors

Indirect optical control of microwave circuits using monolithic optically variable capacitors

Optically-Switched Microwave Filter with the Use of Photovaractors in Self-Bias Mode

Optically Controlled Pin-Diode RF Switching for Tactical Signal Intelligence Technology

Contact Info

Product

Resources

About