Photovoltaic high-performance broadband photodetector based on the heterojunction of MoS2/silicon nanopillar arrays

Zhao, Jijie; Liu, Huan; Deng, Lier; Du, Yuxuan; Wang, Jiuhong; Wen, Shuai; Wang, Shengyong; Zhu, Zhengxing; Xie, Fei; Liu, Weiguo

doi:10.1016/j.apsusc.2023.157994

Cited by 4 publications

(2 citation statements)

References 43 publications

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“…Semiconducting transition metal dichalcogenides (TMDs) monolayers feature a direct bandgap as well as favorable electrical performance. [ 1–4 ] They have demonstrated significant benefits in the areas of optoelectronic detectors, [ 1,5 ] energy storage devices, [ 2,6 ] and integrated circuits. [ 3,4 ] Typically, it is necessary to perform controlled doping and defect modulation on TMDs, manage the type and concentration of carriers, and ultimately realize material functionalization and device integration.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Wan,

Liu,

et al. 2024

Adv Elect Materials

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The integration of 2D ferroelectric materials with 2D photoelectric materials presents a promising avenue for addressing issues related to controlled doping and device integration in layered semiconductors. The reversible and non‐volatile residual polarization inherent to ferroelectrics can provide stable n‐ or p‐type doping for 2D semiconductors. Despite advances in doping strategies for 2D materials, existing techniques, and post‐doping characterization methodologies exhibit limitations, including the challenge of achieving high‐resolution graphical depictions of doped structures. Here, a WS2/CuInP2S6 heterostructure is demonstarted whereby the residual polarization of ferroelectric CuInP2S6 regions with anti‐parallel directions supplies screening charges of opposite signs to WS2 monolayers. This notably alters the ratio of neutral excitons and negatively charged trions within the recombination luminescence of the direct‐gap semiconductor, thereby offering a viable approach for controllable, non‐volatile modulation in 2D systems. Beyond proposing a feasible strategy for patterned doping and effective regulation in 2D semiconductors through interface engineering, this work enhances the understanding of the interplay between ferroelectrics and semiconductors.

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Section: Introductionmentioning

confidence: 99%

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Wan,

Liu,

et al. 2024

Adv Elect Materials

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“…These developed devices achieve outstanding performance using these materials with low dimensions [1,2]. The principle used for the photodetector is to work under light intensity or different wavelengths, which are produced by activating the surface of the photodetector with light radiation, to produce a hot free electron; this produces current values [3][4][5]. Light is detected for these materials by allowing photons to stream through their active sites.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Polyhedron Mn(III) Oxide/-β-Mn(IV) Oxide/Poly-o-chloroaniline Porous Nanocomposite for Electroanalytical Photon Detection

Rabia,

Elsayed,

Alnuwaiser

2023

Processes

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Poly-o-chloroaniline (POCA) and Mn2O3/β-MnO2/POCA porous nanocomposite are both synthesized using oxidative polymerization, with K2S2O8 and KMnO4 as oxidants, respectively. The materials are characterized to confirm their optical, morphological, crystalline, chemical, and elemental properties. The nanocomposite exhibits superior optical properties compared to POCA. The promising optical characteristics make the nanocomposite an attractive candidate for light-sensing applications. Through electrical estimation, the nanocomposite photodetector displays the highest sensitivity between 340 and 440 nm, with Jph (current density) of 0.14 and 0.13 mA cm−2, correspondingly, and an estimated photon number of 7.461021 and 6.93 × 1021 photons/s, respectively. At 340 and 440 nm, the calculated photoresponsivity (R) values are 0.73 and 0.64 mA W−1, respectively, while the estimated detectivity (D) values are 1.64 × 108 and 1.45 × 108 Jones, respectively. These promising results indicate that the fabricated photodetector can soon potentially estimate light wavelengths and photon numbers in various industrial applications.

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High-performance self-biased Cu/SiC/Si photo-sensor with swift response for NIR/Vis photodetection

Arora,

Chander,

Mourya

et al. 2024

Applied Surface Science

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Photovoltaic high-performance broadband photodetector based on the heterojunction of MoS2/silicon nanopillar arrays

Cited by 4 publications

References 43 publications

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Preparation and Characterization of Polyhedron Mn(III) Oxide/-β-Mn(IV) Oxide/Poly-o-chloroaniline Porous Nanocomposite for Electroanalytical Photon Detection

High-performance self-biased Cu/SiC/Si photo-sensor with swift response for NIR/Vis photodetection

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