Photovoltaic Performance Enhancement of Silicon Solar Cells Based on Combined Ratios of Three Species of Europium-Doped Phosphors

Ho, Wen-Jeng; You, Bang-Jin; Liu, Jheng-Jie; Bai, Wen-Bin; Syu, Hong-Jhang; Lin, Ching‐Fuh

doi:10.3390/ma11050845

Cited by 9 publications

(10 citation statements)

References 26 publications

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“…One way to overcome these losses is by shaping the incident sunlight through the use of luminescent downshifting (LDS) layers 4,5 , a relatively direct and cost-effective method to improve conversion efficiency of PV cells. These converting layers are coatings directly applied on the PV cell surface that are able to absorb the incident radiation unused by the PV cell which is then re-emitted at a usable wavelength (or refracted towards the PV cell) 6,7 . Moreover, these LDS layers reveal analogous optical efficiency under diffuse or direct radiation, thus, providing analogous output under cloudy days, which does not happen for bare PV cells.…”

Section: Introductionmentioning

confidence: 99%

“…Several studies showing improvements in solar cells performance with distinct LDS phosphors were reported, such as organic dyes 9,10 , quantum dots (QDs) 9 , and lanthanide ions (Ln 3+ ) coordination complexes 6,7,[9][10][11][12][13][14][15][16][17][18] . The reasons for the wide utilization of Ln 3+ complexes (europium, Eu 3+ , and terbium, Tb 3+ ) are related to their strong emission and photostability and also the emission profile in the visible spectral range, which overlaps the absorption of c-Si solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Lanthanide-based downshifting layers tested in a solar car race

Correia

Bastos

et al. 2019

OEA

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The mismatch between the AM1.5G spectrum and the photovoltaic (PV) cells absorption is one of the most limiting factors for PV performance. To overcome this constraint through the enhancement of solar energy harvesting, luminescent downshifting (LDS) layers are very promising to shape the incident sunlight and, thus, we report here the use of Tb 3+and Eu 3+ -doped organic-inorganic hybrid materials as LDS layers on Si PV cells. Electrical measurements on the PV cell, done before and after the deposition of the LDS layers, confirm the positive effect of the coatings on the cell's performance in the UV spectral region. The maximum delivered power and the maximum absolute external quantum efficiency increased 14% and 27%, respectively. Moreover, a solar powered car race was organized in which the small vehicle containing the coated PV cells presented a relative increase of 9% in the velocity, when compared to that with the uncoated one.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Lanthanide-based downshifting layers tested in a solar car race

Correia

Bastos

et al. 2019

OEA

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“…Researchers have demonstrated the efficacy of adding to solar cells an LDS layer with single-species or multi-species Eu-doped phosphors [26][27][28][29]. However, there has been relatively little research on the fabrication of solar cells using two such layers with two different phosphors [30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Luminescent Down-Shifting Spectral Conversion Effects on Silicon Solar Cells with Various Combinations of Eu-Doped Phosphors

Liu

2022

Materials

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Luminescent down-shifting (LDS) spectral conversion is a feasible approach to enhancing the short-wavelength response of single junction solar cells. This paper presents the optical and electrical characteristics of LDS spectral conversion layers containing a single species or two species of Eu-doped phosphors applied to the front surface of silicon solar cells via spin-on coating. The chemical composition, surface morphology, and fluorescence emission of the LDS layers were respectively characterized using energy-dispersive X-ray analysis, optical imaging, and photoluminescence measurements. We also examined the LDS effects of various phosphors on silicon solar cells in terms of optical reflectance and external quantum efficiency. Finally, we examined the LDS effects of the phosphors on photovoltaic performance by measuring photovoltaic current density–voltage characteristics using an air-mass 1.5 global solar simulator. Compared to the control cell, the application of a single phosphor enhanced efficiency by 17.39% (from 11.14% to 13.07%), whereas the application of two different phosphors enhanced efficiency by 31.63% (from 11.14% to 14.66%).

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“…Currently, the mainstream development of photovoltaic technology concerns cells based on monocrystalline silicon, which constitute about 80% of all cells produced, while nearly 70% are based on p-type silicon, most often obtained by boron doping [7,8].…”

Section: Introduction 1background and Motivationmentioning

confidence: 99%

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

Węgierek

Pastuszak

2021

Materials

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The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of ρ = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne+ ions with the energy E = 100 keV and three different doses of D = 4.0 × 1013 cm−2, 2.2 × 1014 cm−2 and 4.0 × 1014 cm−2, respectively. Activation energies were determined on the basis of Arrhenius curves ln(et(Tp)/Tp2) = f(1/kTp), where Tp is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies fp in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels ∆E = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.

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Photovoltaic Performance Enhancement of Silicon Solar Cells Based on Combined Ratios of Three Species of Europium-Doped Phosphors

Cited by 9 publications

References 26 publications

Lanthanide-based downshifting layers tested in a solar car race

Lanthanide-based downshifting layers tested in a solar car race

Characterization of Luminescent Down-Shifting Spectral Conversion Effects on Silicon Solar Cells with Various Combinations of Eu-Doped Phosphors

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

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