Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands

Кондратенко, С. В.; Vakulenko, O. V.; Kozyrev, Yu. N.; Rubezhanska, M.Yu.; Наумовец, А.Г.; Nikolenko, A. S.; Lysenko, V. S.; Strelchuk, V. V.; Teichert, Christian

doi:10.1007/s10853-011-5528-2

Cited by 7 publications

(4 citation statements)

References 20 publications

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“…In comparison with different established growth methods such as molecular beam epitaxy [3], chemical vapor deposition [4], and thermal evaporation [5], radio frequency (rf) magnetron sputtering is currently the most popular commercially practiced method due to its high deposition rates and being easy, safe, and yet accurate method for largescale production [6,7]. Argon is generally available in fairly pure form and there is not any chemical reaction during the bombarding particles; therefore, it is almost always used for plasma generation.…”

Section: Introductionmentioning

confidence: 99%

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Samavati

Mustafa

Othaman

et al. 2015

Journal of Nanomaterials

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The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ∼8 to ∼30 and ∼2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400 ∘ C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100) nanoislands suitable in nanophotonics.

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Section: Introductionmentioning

confidence: 99%

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Samavati

Mustafa

Othaman

et al. 2015

Journal of Nanomaterials

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“…Nanostructured materials with morphology of nanowires and nanotubes attract researchers to harvest solar energy. Nano brushes, vertical nanopillars, funnellike structures, straight nano wires, nano porous films and nano islands have been reported to harvest solar energy more efficiently [1][2][3][4]. Black-Phosphorus exhibit superior optoelectronic properties than the other two-dimensional materials such as graphene and molybdenum dioxide.…”

Section: Introductionmentioning

confidence: 99%

Insights and potentials of two-dimensional black phosphorous-based solar cells

Thirugnanasambandan,

Karuppaiah,

Sankar

et al. 2024

Phys. Scr.

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The development of advanced materials, new device architectures and fabrication processes will lead to more utilization of renewable energy sources like solar energy. Solar energy can be harvested more effectively using solar cells incorporated with advanced nanomaterials. Black phosphorus (BP) is a two-dimensional material in which the layers are stacked together through van der Waals forces. The electrical and optical properties of the material are much more suitable for use in solar cell applications. BP nanosheets have optoelectronic properties such as tunable bandgap (0.3 eV - 2.0 eV) and high carrier mobility that make them as suitable candidates for solar cells. Also, BP is able to absorb a wide range of light energy in the electromagnetic spectrum. Being a p-type semiconductor, BP finds applications in optoelectronic and semiconductor- devices. The optical absorption of the material is determined by its structural orientation. The material also possesses the high in-plane anisotropic band dispersion near the Fermi level in the Brillouin zone which results in a high direction-dependent optical and electronic properties. The major limitation of the material is its stability since it is degraded under the illumination of light. BP is used as an electron transport layer in solar cells similar to ZnO, TiO2 and graphene. BP can also be integrated with hole transport layers and active materials. Research efforts have shown that BP and its derivatives have more potential to produce high efficiency solar cells. The application of BP in various solar cells and the enhancement in the efficiency of solar cells such as organic solar cells, perovskite solar cells, dye-sensitized solar cells and silicon solar cells are discussed in this review.

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“…5,6 Despite the difficulties due to the lattice mismatch between Si and Ge, multiple fabrication methods 7−10 have been developed to enable the control of the composition, size, and growth of these Ge/Si systems. Meanwhile, considerable progress has been achieved in the detection and analysis of the spatial quantum confinement of charge carriers and optical transitions in Ge/Si heterostructures 11−15 for potential applications such as light-emitting diodes, 16,17 solar cells, 18,19 or quantum computers. 20 From a structural point of view, two theoretical model classes of semiconductor quantum dots can be distinguished embedded and freestanding quantum dotswhich are tackled with different computational methods.…”

Section: ■ Introductionmentioning

confidence: 99%

“…These type-II semiconductor heterostructures stand out by their large valence-band offset (∼0.7 eV), which engenders an electron hole localization in the Ge regions and an electron confinement in the Si layers. , Despite the difficulties due to the lattice mismatch between Si and Ge, multiple fabrication methods − have been developed to enable the control of the composition, size, and growth of these Ge/Si systems. Meanwhile, considerable progress has been achieved in the detection and analysis of the spatial quantum confinement of charge carriers and optical transitions in Ge/Si heterostructures − for potential applications such as light-emitting diodes, , solar cells, , or quantum computers …”

Section: Introductionmentioning

confidence: 99%

Laser-Driven Hole Trapping in a Ge/Si Core–Shell Nanocrystal: An Atomistic Configuration Interaction Perspective

Hermann

Tremblay

2015

J. Phys. Chem. C

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This contribution reports on the first example of laser-driven charge carrier confinement in a solid state quantum dot investigated using a fully atomistic, correlated many-electron ansatz. Specifically, a Ge/Si model nanocrystal is designed to retain the main structural characteristics and excitonic properties of experimentally observed self-assembled pyramidal heterostructures. State-selective laser excitations yielding hole confinement in the Ge nanostructure are simulated using the reduced density matrix variant of the time-dependent configuration interaction method (ρ-TDCI). The degree of carrier localization in the quantum dot is determined by analyzing the correlated one-electron densities from configuration interaction electronic states at a singles level. Additionally, dissipation and pure dephasing are included to treat the coupling of the local core−shell structure with the vibrations of the surrounding silicon matrix. For this purpose, a new microscopic model for these nonadiabatic coupling rates is derived. The results reveal that, despite the presence of dissipation, charge carriers can be efficiently confined by localized optical excitations in the model Ge/Si quantum dot to create long-lived, large permanent dipoles in the nanocrystal.

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Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands

Cited by 7 publications

References 20 publications

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Insights and potentials of two-dimensional black phosphorous-based solar cells

Laser-Driven Hole Trapping in a Ge/Si Core–Shell Nanocrystal: An Atomistic Configuration Interaction Perspective

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