j nanosci nanotechnol
 2019
DOI: 10.1166/jnn.2019.16234
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Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering

Weerasaruth Kaenrai
1
,
Nathaporn Promros
2
,
Phongsaphak Sittimart
3
et al.
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Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering

Charoenyuenyao
1
,
Chaleawpong
2
,
Borwornpornmetee
3
et al. 2022
Materials Science in Semiconductor Processing
5
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1
0
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Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering

Charoenyuenyao
1
,
Chaleawpong
2
,
Borwornpornmetee
3
et al. 2022
Materials Science in Semiconductor Processing
5
0
1
0
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Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

Chaleawpong
1
,
Promros
2
,
Charoenyuenyao
3
et al. 2020
Thin Solid Films
16
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5
0
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Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering

Charoenyuenyao
1
,
Promros
2
,
Chaleawpong
3
et al. 2020
Thin Solid Films
7
0
7
0
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