2014
DOI: 10.1111/jace.12837
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Photovoltaic Properties of Multiferroic BiFeO3/BiCrO3 Heterostructures

Abstract: We report a power conversion efficiency of ~0.01% in multistacking of BiFeO3/BiCrO3 bilayer thin films used as active layers in a photovoltaic (PV) device. The films were epitaxially deposited by pulse laser deposition onto (100) oriented CaRuO3‐coated LaAlO3 substrates and were subsequently illuminated with 1 sun (AM 1.5). The fill factor is determined to be 0.31%, a remarkable value for ferroelectric‐ and multiferroic‐based PV devices. Our results demonstrate that photocurrent density and photovoltage can be… Show more

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Cited by 40 publications
(12 citation statements)
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“…In a similar fashion, in BiFeO 3 /BiCrO 3 bilayers, a high photovoltaic current of 130 μA cm −2 has been recorded for 15 nm thick layers, twice as much as the photovoltaic current measured in 40 nm thick layers. [74] …”
Section: Size Effects: the Smaller The Better?mentioning
confidence: 99%
See 1 more Smart Citation
“…In a similar fashion, in BiFeO 3 /BiCrO 3 bilayers, a high photovoltaic current of 130 μA cm −2 has been recorded for 15 nm thick layers, twice as much as the photovoltaic current measured in 40 nm thick layers. [74] …”
Section: Size Effects: the Smaller The Better?mentioning
confidence: 99%
“…It is worth mentioning that in addition to the PCE, the fill factor (FF) i.e., the maximum power in the current-voltage curve divided by the product of the short-circuit photovoltaic current and the open-circuit photovoltage is an important parameter as it characterizes the quality of the solar cell. Only few papers on photoferroelectrics [13,74] have reported FF data and showed rather weak values of about 10-30% while in classical semiconductors it reaches typically up to 80%. Low FF values are usually attributed to resistive losses via for instance electrodes contact or defects.…”
Section: Introductionmentioning
confidence: 99%
“…FEs can even yield an above band gap photovoltage that clearly distinguishes them from conventional semiconductors, referred to as anomalous photovoltage [11]. However, the direction of photocurrent can be switched by reversing the polarization direction, which indicates its contribution to PV effects [12]. The typical generation of photocurrent is of the order of few nA cm -2 [2].…”
Section: Introductionmentioning
confidence: 99%
“…Since light absorption and carrier concentrations are both band-gap dependent, the red-shift of the absorption edge of BFCO with respect to BCO and BFO and the increase of the spectral weight around 1.55 and 2.14 eV will increase the power conversion efficiencies (PCE) recently reported in such oxide materials (typically between 0.1 and 0.3%). [29][30][31] We studied the PV properties of BFCO thin films integrated on a Si substrate under 1.5 AM Sunlight, corresponding to an incident power density of 100 mW cm −2 . Device characterization was carried out in an ambient environment.…”
mentioning
confidence: 99%