Photovoltaic properties of SnS based solar cells

Reddy, K.T. Ramakrishna; Reddy, N. Koteswara; Miles, Robert

doi:10.1016/j.solmat.2006.06.012

Cited by 542 publications

(267 citation statements)

References 7 publications

Supporting

Mentioning

255

Contrasting

Unclassified

Order By: Relevance

“…5 In recent years, the conversion efficiency of SnS-based solar cells has considerably improved from 1.3% to 4.36%. 1,[7][8][9][10][11] However, the record efficiency still pales in comparison to the theoretical maximum efficiency a of SnS, 32%. 12 As a step towards understanding the loss mechanisms at play, the present work focuses on the measurement and modeling of carrier collection and photocurrent in SnS devices.…”

mentioning

confidence: 87%

“…Tin (II) sulfide (SnS) is a promising Earth-abundant thin-film solar absorber material because of its high absorption coefficient in the visible wavelengths, [1][2][3][4][5] tunable hole carrier density in the range 10 15 to 10 18 cm -3 , 1,6 and potential for high-throughput manufacturing. 5 In recent years, the conversion efficiency of SnS-based solar cells has considerably improved from 1.3% to 4.36%.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

Chakraborty

Steinmann

Mangan

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150°C to 240°C and then recovers at 285°C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the nonmonotonic behavior of charge-carrier collection can be explained by a transition from drift-to diffusionassisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285°C. These findings illustrate how coupled mechanisms can affect early-stage device development, highlighting the critical role of direct materials property measurements and simulation.

show abstract

mentioning

confidence: 87%

mentioning

confidence: 99%

Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

Chakraborty

Steinmann

Mangan

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…). 1 There have been numerous reports on SnS-based thin film solar cells with various buffer layers, including SnS 2 , 2 CdO, 3 Cd 2 SnO 4 , 3 CdS, [4][5][6][7][8][9][10] Cd 1Àx Zn x S, 7 ZnO, 11,12 TiO 2 , 13 PbS, 14 and a-Si. 15 The prevalent low efficiencies can be attributed to various sources, such as bulk material impurities and defects, interface trap states, and notably unfavorable heterojunction band alignment.…”

mentioning

confidence: 99%

Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

Sun

Haight²,

Sinsermsuksakul

et al. 2013

Appl. Phys. Lett.

View full text Add to dashboard Cite

“…Tin sulfide has been synthesized using a variety of techniques such as sputtering [127], evaporation [129], electrodeposition [130] as well as chemical routes [131]. The highest reported efficiency to date is 1.3% [132].…”

Section: Other Earth-abundant Candidatesmentioning

confidence: 99%