2015
DOI: 10.1007/s13320-015-0241-4
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Photovoltaic properties of thermally-grown selenium-doped silicon photodiodes for infrared detection applications

Abstract: Abstract:In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that … Show more

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Cited by 17 publications
(8 citation statements)
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“…Electrical resistivity of NiO thin films was studied by many researchers [22][23][24][25][26], and reported resistivity was in the range of 10 Ω⋅cm -10 6 Ω⋅cm. Table 1 shows the Hall effect measurement data of NiO films at 400 ℃ temperature.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Electrical resistivity of NiO thin films was studied by many researchers [22][23][24][25][26], and reported resistivity was in the range of 10 Ω⋅cm -10 6 Ω⋅cm. Table 1 shows the Hall effect measurement data of NiO films at 400 ℃ temperature.…”
Section: Resultsmentioning
confidence: 99%
“…The thermal activation energy (E a ) calculated by the Arrhenius equation was equal to 2.7 eV. The estimated activation energy was found to depend on the structure of the prepared material (single or poly crystalline) as well as on the range of temperatures [24][25]. Dynamic response measurement of the prepared film was performed against H 2 in air flow at working temperature of 350 ℃, 375 ℃, and 400 ℃ inside a stainless steel chamber.…”
Section: Resultsmentioning
confidence: 99%
“…5) shows that the morphology has a large number of grain size, which indicates the crystalline nature of the film because it was prepared at the temperature higher than the room temperature. Due to heating effect, grain growth will take place and result in the crystallinity and good surface morphology [16][17][18].…”
Section: Resultsmentioning
confidence: 99%
“…The electron temperature is an equally important plasma parameter which can be spectroscopically determined in a variety of ways: from the ratio of integrated line intensities, from the ratio of line intensity to underlying continuum, and from the shape of the continuum spectrum [16,17]. The diagnostic techniques employed for the determination of electron density includes plasma spectroscopy, Langmiur probe, microwave and laser interferometry, and Thomson scattering [18,19].…”
Section: Introductionmentioning
confidence: 99%