Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple‐Quantum Wells Structure

Haldar, Subhomoy; Kumar, Shailendra; Roychowdhury, R.; Dixit, V. K.

doi:10.1002/pssb.202000331

Cited by 5 publications

(2 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Kim et al [39] also explained the effect of carrier trapping at the defect states on the reduction of PR amplitude of InAs/GaAs quantum dots (QDs). In the surface photo-voltage (SPV) measurement, Haldar et al [40] reported the SPV phase delay in AlGaAs/GaAs multiple-QW structure due to the charge carrier localization at the heterointerfaces. This is also explained by the opposing electric field of the interface, which retard the drift of electrons under the surface electric field.…”

Section: Resultsmentioning

confidence: 99%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells is investigated. Three sets of high-mobility InGaAs quantum well structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the quantum well, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in quantum well by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven Diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.

show abstract

Section: Resultsmentioning

confidence: 99%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…On the other hand, several researchers have studied the band structure of GaAs/GaAlAs. Subhomoy Haldar et al [18] have investigated, by thermal, excitation power, and chopping-frequency-dependent surface photovoltage (SPV) measurements, the role of radiative and non-radiative processes on the photovoltaic response of GaAs/AlGaAs multiple quantum wells. These measurements provide important informations on thermal escape, carrier localization and spatial redistribution of charge carriers.…”

Section: Introductionmentioning

confidence: 99%

High quality factor multichannel filter of electrons based on defective CdMnTe/CdTe multi-quantum wells

et al. 2021

View full text Add to dashboard Cite

Using the transfer matrix (TM) method, the propagation of electrons is studied, in a one-dimensional multi-quantum well composed of alternating layers of barriers and wells. In the first time, we proposed system with a single barrier CdMnTe is embedded between two semi-infinite substrates. Hence, the corresponding Eigen modes energies were found to be shifted towards lower energies as the barrier thickness increases. The resulting Eigen modes are characterized by a high transmission rates but a very low quality factor values, which highlight the importance of the system periodicity. On the other hand, in order to create localized states in the band gaps, a defective system is exanimated. Indeed, a defect barrier is inserted in a perfect multi-quantum wells (MQWs) system, basically made of repeated CdMnTe barriers and CdTe wells. This defective system can create multi defect modes in the electronic band gaps. The analysis of the transmittance spectra of the defect states evidences a shift to lower energies by increasing the defect thickness with fixed parameters of the system. These defect states move toward higher energy regions, when the concentration of defect increases. In addition, the energy of the defect states varying from 600 meV to 785 meV. We found one defect state for a defect concentration equal to 0.7, when the defect thickness is equal to 5 A°. Otherwise, for a defect concentration equal to 0.1, with a defect thickness of 150 A°, we found two defect states appeared inside the gaps. While, three defect states were found for a concentration interval between 0.3 and 0.5 and a defect thickness equal respectively to 127 A°and 145 A°. These defect states have higher quality factors reaching 7630000. Moreover, it shown that the number of gaps modes depends on the defect concentration's and thickness' parameters. High quality factors are reached, and an electron multichannel filtering system is then proposed.

show abstract

Tailoring electronic structure and thermodynamic stability of (Al, In)-substituted GaAs: Ab-initio insights into bulk and (001) surfaces

Arellano-Ramirez,

Amaya-Roncancio,

Rebaza

et al. 2024

Materials Today Communications

View full text Add to dashboard Cite

Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple‐Quantum Wells Structure

Cited by 5 publications

References 54 publications

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

High quality factor multichannel filter of electrons based on defective CdMnTe/CdTe multi-quantum wells

Tailoring electronic structure and thermodynamic stability of (Al, In)-substituted GaAs: Ab-initio insights into bulk and (001) surfaces

Contact Info

Product

Resources

About