Photovoltaic Silicon Crystal Growth

Ciszek, T.F.

doi:10.1002/9780470012086.ch16

Cited by 1 publication

(1 citation statement)

References 23 publications

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“…This solid is then pulled horizontally with a specified velocity, u s , such that a steady-state production process is established. There are different types of horizontal ribbon growth processes (see [1][2][3][4] for overviews) such as horizontal supported web (HSW) [5], ribbon growth on substrate (RGS) [6], and methods in which there is no contact with a substrate [7,8]. These last methods are often just called horizontal ribbon growth or in some cases the low-angle silicon sheet method (LASS) [9]).…”

Section: Introductionmentioning

confidence: 99%

Experimental and numerical investigation of the horizontal ribbon growth process

Helenbrook

Kellerman

Carlson

et al. 2016

Journal of Crystal Growth

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Experimental and numerical results are presented on the process of horizontal ribbon growth (HRG) of single-crystal silicon. Experimental data on the leading edge position of the growth front as a function of pull speed is compared to model predictions with and without solidification kinetic effects. Without kinetics, the numerical results predict leading edge positions which are completely different than that observed in the experiment. With kinetics, the leading edge position is predicted typically within 1 mm and the change in position with pull speed also is well predicted. Conclusions from the kinetic model are that the growth occurs through a faceted process where the leading edge is a {111} facet that requires significant supercooling to maintain the growth. An outcome of the model is that the leading edge position versus pull speed response shows a turning point beyond which there are no steady growth solutions. This is consistent with all previously reported experiments on this process, which have reported maximum attainable pull-speeds. These results

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