Photovoltaics literature survey (no. 45)

Richards, Bryce S.

doi:10.1002/pip.711

Cited by 2 publications

(1 citation statement)

References 224 publications

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“…Deposition of TiO x was performed using either chemical or physical vapour techniques , and its use extended beyond that of the solar industry, most prominently in glass manufacturing as a protection coating deposited using ultra‐high throughput techniques . Despite its ideal optical properties, TiO x was replaced by hydrogenated silicon nitride (SiN x ) since the evolution of silicon solar cells required appropriate passivation of the cells front surface, and this could not be accomplished using TiO x . As mentioned in previous sections, PECVD SiN x is today's preferred method to provide passivation and antireflection to the cell front surface.…”

Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

235

161

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

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Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%