Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)

Pey, K. L.; Raghavan, Nagarajan; Wu, Xing; Liu, Wenhu; Li, Xiang; Bosman, Michel; Shubhakar, K.; Lwin, Z. Z.; Qin, Hailang; Kauerauf, T.

doi:10.1016/j.mee.2011.03.012

Cited by 19 publications

(10 citation statements)

References 19 publications

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“…Together with the grain boundary twists, a hillock‐like shape appeared in the InGaAs substrate. These findings are in agreement with the previous study of dielectric breakdown‐induced epitaxy (DBIE) in an SiO 2 /Si gate stack . DBIE is a nanomark that fingerprints an important physical signature for the defect‐driven breakdown location such that the invisible percolation can be located unambiguously .…”

supporting

confidence: 92%

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Luo

Peng

et al. 2017

Advanced Materials

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The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO films on Al O and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.

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supporting

confidence: 92%

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Luo

Peng

et al. 2017

Advanced Materials

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“…We also observe the presence of a crystalline Si hillock, punching into the SiO 2 layer, which is also called the dielectric breakdown induced epitaxy (DBIE). 26,27 From our previous experiments, it was established that the chemistry of the percolation path responsible for high electrical conduction in the broken-down gate dielectrics is an O-deficient conductive path, where oxygen atoms are washed out from the core of the percolation path. 20,[28][29][30] It is important to note that in these former cases, the transistor gate electrode is polycrystalline silicon not a metal.…”

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confidence: 99%

Intrinsic nanofilamentation in resistive switching

Cha

Bosman

et al. 2013

Journal of Applied Physics

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Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

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“…14 However, changes in O 2À coordination at the Co/GdOx interface could also play an important role in the observed effects. 24 Oxygen vacancy V O 2þ generation is often a precursor of dielectric breakdown in high-k gate oxides 25 and V O 2þ would migrate predominantly to the Co/GdOx interface due to the high positive V g . Since hybridization between Co 3 d and O 2p orbitals is expected to play a crucial role in the PMA of the Co film, 19,20,26 the PMA should be very sensitive to changes in interface oxygen stoichiometry.…”

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confidence: 99%

Electric field control of domain wall propagation in Pt/Co/GdOx films

Bauer

Emori

Beach

2012

Applied Physics Letters

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The influence of a gate voltage on domain wall (DW) propagation is investigated in ultrathin Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy. The DW propagation field can be enhanced or retarded by an electric field at the Co/GdOx interface and scales linearly with gate voltage up to moderate bias levels. Higher gate voltage levels, corresponding to electric fields >0.2 V/nm, produce a large irreversible change to the magnetic anisotropy that can enable nonvolatile switching of the coercivity. V

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Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)

Cited by 19 publications

References 19 publications

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Intrinsic nanofilamentation in resistive switching

Electric field control of domain wall propagation in Pt/Co/GdOx films

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