Physical and chemical properties of amorphous hydrogenated carbon films deposited by PECVD in a low self-bias range

Maître, Nicolas; Camelio, S.; Barranco, Ángel; Girardeau, T.; Bréelle, É.

doi:10.1016/j.jnoncrysol.2005.01.058

Cited by 34 publications

(11 citation statements)

References 25 publications

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“…It is known that n and k are related and have a theoretical linear relationship for all kinds of DLC films [20,21]. However, many authors also show that there are some variations within this broad line [22], which seem to correspond with the results in Fig. 4.…”

Section: Null Ellipsometrysupporting

confidence: 68%

Properties of W incorporated diamond-like carbon films prepared by pulsed-laser deposition

Wang

et al. 2009

Journal of Alloys and Compounds

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Section: Null Ellipsometrysupporting

confidence: 68%

Properties of W incorporated diamond-like carbon films prepared by pulsed-laser deposition

Wang

et al. 2009

Journal of Alloys and Compounds

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“…30,31) Meanwhile, the migration rate (R m ) of the radicals on the growth surface was low. As soon as the viscous radicals reached the surface, they interacted immediately with the incorporated units.…”

Section: Resultsmentioning

confidence: 99%

Defining a parameter of plasma-enhanced CVD to characterize the effect of silicon-surface passivation in heterojunction solar cells

Guo

Zhang

Bao³

et al. 2015

Jpn. J. Appl. Phys.

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The hydrogen content (C H ) and microstructure of a hydrogenated amorphous-silicon (a-Si:H) layer fabricated by plasma-enhanced chemical vapor deposition (PECVD) were analyzed to determine the effect of surface passivation on crystalline silicon (c-Si). The ratio of radio-frequency power to gas pressure (C pp in W&Pa %1 ) of the PECVD system is defined as a characterization parameter. It was found that C H and the passivation of a-Si:H layers were sensitively affected by C pp . However, C H remained almost constant at the same C pp even though the PECVD power and pressure were widely varied. We determined that an optimal region exists in the range of 0.75 < C pp < 1.25, where a high implied open-circuit voltage of 732 mV was obtained from a passivated a-Si:H/c-Si/a-Si:H structure, indicating that C pp was a useful parameter for characterizing the surface passivation effect of a a-Si:H layer on c-Si.

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“…27,30 However, these changes were reported for very high ion energies (90 À 800 eV), [27][28][29] whereas the ion energy in an expanding thermal plasma at floating potential is less than a few eV's (see also Sec. IV A).…”

Section: Hydrogenated Amorphous Carbonmentioning

confidence: 99%

Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

Hansen

Weber

Colsters

et al. 2012

Journal of Applied Physics

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The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H2 and pure H2 plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

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Physical and chemical properties of amorphous hydrogenated carbon films deposited by PECVD in a low self-bias range

Cited by 34 publications

References 25 publications

Properties of W incorporated diamond-like carbon films prepared by pulsed-laser deposition

Properties of W incorporated diamond-like carbon films prepared by pulsed-laser deposition

Defining a parameter of plasma-enhanced CVD to characterize the effect of silicon-surface passivation in heterojunction solar cells

Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

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