Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials 2007
DOI: 10.7567/ssdm.2007.p-1-5
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Physical and Electrical Properties of Addition Ti into Er2O3 Gate Dielectrics

Tung-Ming Pan1,
Wei-Hao Hsu2,
Chung-Chin Huang3
et al.
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