Physical aspects of a-Si:H/c-Si hetero-junction solar cells

Schmidt, M.; Korte, Lars; Laades, A.; Stangl, Rolf; Schubert, C.; Angermann, H.; Conrad, E.; Maydell, K.v.

doi:10.1016/j.tsf.2006.11.087

Cited by 152 publications

(100 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TCO layer at the front is modelled as an optical layer, thus at the front contact the measured TCO absorption (Schmidt et. al., 2007) as well as the measured solar cell reflection due to the surface texturing (Schmidt et. al., 2007) is specified.…”

Section: Selected Examples On Afors-het Simulationsmentioning

confidence: 99%

Numerical Simulation of Solar Cells and Solar Cell Characterization Methods: the Open-Source on Demand Program AFORS-HET

Stangl¹,

Leendertz²,

Haschke³

2010

Solar Energy

View full text Add to dashboard Cite

Section: Selected Examples On Afors-het Simulationsmentioning

confidence: 99%

Numerical Simulation of Solar Cells and Solar Cell Characterization Methods: the Open-Source on Demand Program AFORS-HET

Stangl¹,

Leendertz²,

Haschke³

2010

Solar Energy

View full text Add to dashboard Cite

“…2͒ for a practical size of 100.4 cm 2 and 17.3% module efficiency 2 in HIT structures on N-type c-Si substrates, leading to industrial production already in 2003. Sanyo has focused on P-a-Si:H/N-c-Si HIT structures, [1][2][3][4][5][6] while European and U.S. groups have studied both P-a-Si:H/N-c-Si and N-a-Si:H/P-c-Si, structures, [7][8][9][10]30 with the maximum efficiency on P-type substrates reaching between 17% and 18%. 7,10,30 Recent studies have focused on the optimization of these devices in order to maximize the conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…Sanyo has focused on P-a-Si:H/N-c-Si HIT structures, [1][2][3][4][5][6] while European and U.S. groups have studied both P-a-Si:H/N-c-Si and N-a-Si:H/P-c-Si, structures, [7][8][9][10]30 with the maximum efficiency on P-type substrates reaching between 17% and 18%. 7,10,30 Recent studies have focused on the optimization of these devices in order to maximize the conversion efficiency. In HIT cells, in addition to the usual surface texturing techniques, 11 increases in efficiency have been obtained by optimized c-Si surface cleaning process, high quality and low damage intrinsic a-Si:H deposition technology, and in general by attaining good amorphouscrystalline ͑a-c͒ heterointerfaces and passivation of defects on the surface of the c-Si wafer, e.g., Ref.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

Rahmouni¹,

Datta

Chatterjee

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon ͑c-Si͒ solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon ͑a-Si:H͒ emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high V oc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

show abstract

“…Applying a special sequence of wet-chemical oxidation and oxide etching in HF containing solutions, the damaged surface region was removed and the microroughness of structured surfaces was reduced on the nmmeter scale. The application of optimized wet-chemical surface pre-treatment on p-type substrates with pyramidal light trapping structures enhanced the solar cell efficiency of amorphous-crystalline hetero-junction solar cells on ptype Si absorbers (ZnO/a-Si:H(n)/c-Si(p)/Al) from 17.4% (confirmed) [22] up to 18.4% [21]. Also on n-type substrates, textured by Si(111) pyramids, the high density of states in the lower part of the gap, measured after standard H-termination procedure [10] (Fig.…”

Section: Determination Of the Energetic Distribution Of Preparation-imentioning

confidence: 95%

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Rappich

Klimm

2009

Open Physics

View full text Add to dashboard Cite

Abstract:On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations. 73.20.At; 73.50.Pz; 81.65.Cf; 81.65 PACS (2008):

show abstract

Physical aspects of a-Si:H/c-Si hetero-junction solar cells

Cited by 152 publications

References 11 publications

Numerical Simulation of Solar Cells and Solar Cell Characterization Methods: the Open-Source on Demand Program AFORS-HET

Numerical Simulation of Solar Cells and Solar Cell Characterization Methods: the Open-Source on Demand Program AFORS-HET

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Contact Info

Product

Resources

About