Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

Abstract

Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films. CdS thin films with thickness of 1000 nm were deposited by vacuum evaporation at room temperature. Characteristic parameters of Schottky junctions formed by a thermal vapor deposition of 500 nm of Al films on pre-coated CdS glass substrates were obtained experimentally from the I-V characteristics in the temperature range of 303-393 K. Diode parameters, such as the zero-bias barrier height φ b0 , flat band barrier height Φ bf , ideality factor η, and series resistance R S were investigated using the thermionic emission method.

Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

“…Diode parameters Jo, η and SBH were calculated and listed in table 1. The ideality factor of grown Schottky was found near to 1 [12]. Comparing the characteristics, it reveals that the diode ideality and Jo gets increased with the increase in doping concentration.…”

“…Figure 3a and 3b shows the plot of voltage Vs ln (J o ) for Cu / (n)-CdS 0.8 Se 0.2 Schottky diode and Cu / (n)-CdS 0.6 Se 0.4 Schottky diode respectively. The Schottky Barrier Height (SBH) can be formulized as [12]:…”