2022
DOI: 10.1007/s10854-022-09355-7
|View full text |Cite
|
Sign up to set email alerts
|

Physical characterization of Ge–Zn–Se thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2025
2025

Publication Types

Select...
5

Relationship

1
4

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 52 publications
0
1
0
Order By: Relevance
“…According to the Davis and Mott model (DMM), the B parameter can be expressed as [46] B σ min nε o cE e , (9) where n represents the film's refractive index, σ min represents the lowest metallic conductivity, and ε o and c have the same meaning and values here [38,47]. On the other side, Figure 7 represents the plots of (αh]) 2 vs. h] for the films under study.…”
Section: Absorbance Coefficient and Optical Band Gapmentioning
confidence: 99%
“…According to the Davis and Mott model (DMM), the B parameter can be expressed as [46] B σ min nε o cE e , (9) where n represents the film's refractive index, σ min represents the lowest metallic conductivity, and ε o and c have the same meaning and values here [38,47]. On the other side, Figure 7 represents the plots of (αh]) 2 vs. h] for the films under study.…”
Section: Absorbance Coefficient and Optical Band Gapmentioning
confidence: 99%