Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity

Abstract

This paper presents the physical device modeling of a Si/Si 1−x Ge x multi-quantum well (MQW) detector to optimize the Ge content in the Si 1−x Ge x well required to enhance thermal sensitivity for a potential microbolometer application. The modeling approach comprises a self-consistent coupled Poisson-Schroedinger solution in series with the thermionic emission theory at the Si/Si 1−x Ge x heterointerface and quantum confinement within the Si 1−x Ge x MQW. The integrated simulation environment developed in Sentauruas WorkBench (SWB) TCAD is employed to investigate the transfer characteristics of the device consisting three stacks of Si 1−x Ge x wells with an active area of 17µm x 17µm were investigated and compared with experiment data.