Physical/electromagnetic analysis of multifinger MOSFETs with SB-SP combined methods

Abstract

The frequency-domain spectral balance technique has been demonstrated to be a viable alternative to the mixed-domain Harmonic Balance technique. It has already been applied to the space-domain polynomial expansion of the physical quantities inside the semiconductor, for the solution of steady-state nonlinear differential equations, for the physical analysis of high-frequency semiconductor devices. In this article it is coupled to a commercial electromagnetic solver, for the combined physical and electromagnetic analysis of multifinger MOSFET devices in linear and nonlinear regime. This method allows a fast and effective CAD analysis both in DC and RF periodic regime for very high frequencies. A quasi-2D hydrodynamic formulation is used for a 0.35 lm gate length with a total 30 lm periphery, three finger MOSFET device; results are compared with those of a standard physical time-domain, a harmonic balance and a spectral balance analysis for comparison of numerical efficiency. Moreover, comparison of S-parameters with a commercial CAD tool with a compact model for circuit analysis is also given.

A 3D α-Fe2O3nanoflake urchin-like structure for electromagnetic wave absorption

“…Electromagnetic (EM)-wave-shielding and/or absorbing materials have recently received increasing attention due to the rapid development of microwave applications in wireless communications, 1 high-frequency circuit devices, 2 and radar stealth systems. 3 Aside from conventional EM-wave-absorbing materials such as ferrites and carbonyl iron, nanomaterials such as SiC nanowires, 4 Fe/C nanotube cables, 5 Fe/C core-shell nanocapsules, 6 Ni/Ag coreshell nanoparticles, 7 Fe nanowires, 5 carbon fiber/carbonyl-iron, 8 and carbonyl-iron/rubber 9 have been recently studied. These studies found that nanomaterials have soft magnetic and dielectric characteristics, making them promising radar-absorbing materials (RAMs).…”