2024
DOI: 10.1049/pel2.12706
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Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Hangzhi Liu,
Shiwei Liang,
Yuming Zhou
et al.

Abstract: Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on current heterogeneity over the chip device. In this paper, a practical integrated multi‐cell simulation is performed to physically characterize the turn‐on transient of SiC GTO thyristor. Through examining electrical coupling between adjacent cells caused by both parasitics of elect… Show more

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