Physical interpretation of weak localization: A time-of-flight experiment with conduction electrons

Bergmann, Gerd

doi:10.1103/physrevb.28.2914

Cited by 333 publications

(125 citation statements)

References 34 publications

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“…Bergmann 23 first pointed out that weak localization through multiple scattering and quantum interference can give an additional contribution to electron localization. This effect is relatively strong when the scattering length is short.…”

Section: Resistivitymentioning

confidence: 99%

Physical properties of Heusler-likeFe2VAl

et al. 2001

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A comprehensive characterization of the compound Fe 2 VAl was carried out. Samples grown by arc melting or the Bridgman method have Al and Fe deficiencies of up to 5 at. %. Czochralski-grown samples were Fe rich and Al deficient. X-ray diffraction implies appreciable antisite disorder in all of our samples. Fourier-transform infrared (FTIR) spectroscopy measurements showed that the carrier density and scattering time had little sample-to-sample variation or temperature dependence for near-stoichiometric samples. FTIR and dc resistivity suggest that the transport properties of Fe 2 VAl are influenced by both localized and delocalized carriers, with the former primarily responsible for the negative temperature coefficient of resistivity. Magnetization measurements reveal that near-stoichiometric samples have superparamagnetic clusters with at least two sizes of moments. We conclude that in Fe 2 VAl, antisite disorder causes significant modification to the semimetallic band structure proposed theoretically. With antisite disorder considered, we are now able to explain most of the physical properties of Fe 2 VAl. None of our data suggest heavy-fermion behavior in our samples. A comprehensive characterization of the compound Fe 2 VAl was carried out. Samples grown by arc melting or the Bridgman method have Al and Fe deficiencies of up to 5 at. %. Czochralski-grown samples were Fe rich and Al deficient. X-ray diffraction implies appreciable antisite disorder in all of our samples. Fourier-transform infrared ͑FTIR͒ spectroscopy measurements showed that the carrier density and scattering time had little sample-to-sample variation or temperature dependence for near-stoichiometric samples. FTIR and dc resistivity suggest that the transport properties of Fe 2 VAl are influenced by both localized and delocalized carriers, with the former primarily responsible for the negative temperature coefficient of resistivity. Magnetization measurements reveal that near-stoichiometric samples have superparamagnetic clusters with at least two sizes of moments. We conclude that in Fe 2 VAl, antisite disorder causes significant modification to the semimetallic band structure proposed theoretically. With antisite disorder considered, we are now able to explain most of the physical properties of Fe 2 VAl. None of our data suggest heavy-fermion behavior in our samples. Keywords Physics and Astronomy

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Section: Resistivitymentioning

confidence: 99%

Physical properties of Heusler-likeFe2VAl

et al. 2001

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“…Antilocalization theory describes deviations from the classically predicted conductance G 0 as a consequence of interference between itinerant electrons on time-reversed trajectories. 5,[10][11][12][13][14][15][16][17][18][19][20][21][22][23] The magnitude of the antilocalization corrections depend on L S , on L , and on the applied magnetic field B. Thus quantitative information about both L S and L can be obtained from magnetotransport measurements.…”

Section: Introductionmentioning

confidence: 99%

“…Thus quantitative information about both L S and L can be obtained from magnetotransport measurements. 5,[10][11][12][13][14][15][16][17][18][19][20][21][22][23] Extensive experimental and theoretical research on antilocalization phenomena in thin films of metals [11][12][13] and semiconductors, [23][24][25] in 2DESs, [14][15][16][17][18][19][20][26][27][28][29][30][31][32] in hole systems, 22,33 and in narrow wires [7][8][9][34][35][36] demonstrate that these measurements form a valuable experimental tool for investigating spin and phase coherence in various material systems.…”

Section: Introductionmentioning

confidence: 99%

Spin and phase coherence lengths inn-InSbquasi-one-dimensional wires

et al. 2010

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We present measurements of the magnetoconductance of quasi-one-dimensional wires fabricated on a twodimensional electron system in an InSb/InAlSb heterostructure. The width and temperature dependence of the spin and phase coherence lengths in the narrow wires are examined by analyzing the magnetoconductance in antilocalization theory, modified to account for ballistic transport. The experiments indicate that the confined geometry can enhance spin coherence lengths in systems not in the motional narrowing regime and in the presence of strong cubic Dresselhaus spin-orbit interaction. Experimentally, the spin coherence lengths are found to be inversely proportional to wire width and to display a weak temperature dependence. For all wire widths the phase coherence length, after correction for finite length effects, shows a temperature dependence indicative of phase decoherence via the one-dimensional Nyquist mechanism.

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“…1 In itinerant ferromagnetic systems magnetoresistance measurements offer a direct method for measurements of the spin-orbit interaction through weak localization. 2 Weak localization can be described as interference among the conduction-electron wave functions in an electron-electron scattering event. In the presence of spin-orbit interaction the spin of the conduction electron can be rotated in a scattering event, which results in a destructive interference, an effect known as weak antilocalization.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic spin-orbit interaction revealed by in-plane magnetoresistance in single-oriented SrRuO3thin films

Gunnarsson

2012

Phys. Rev. B

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A detailed analysis of the in-plane magnetoresistance anisotropy in single-orientation thin-film SrRuO 3 grown on (001)SrTiO 3 is presented. The resistivity is measured in strips along [001], [110], and [111] with an in-plane rotating magnetic field. The data show additional details in the transfer from negative to positive magnetoresistance when the field is rotated in the plane. They show that the magnetoresistance is anisotropic with respect to the crystalline directions rather than with respect to the direction of the current. The data suggest an anisotropic spin-orbit interaction and can possibly be a sign of in-plane weak antilocalization.

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Physical interpretation of weak localization: A time-of-flight experiment with conduction electrons

Cited by 333 publications

References 34 publications

Physical properties of Heusler-likeFe2VAl

Physical properties of Heusler-likeFe2VAl

Spin and phase coherence lengths inn-InSbquasi-one-dimensional wires

Anisotropic spin-orbit interaction revealed by in-plane magnetoresistance in single-oriented SrRuO3thin films

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