Physical mechanism of the “reverse short-channel effect” in MOS transistors

Hsu, Sheng Teng; Kalish, I.H.; Suzuki, Kenta; Kawabata, R.; Shibayama, H.

doi:10.1016/0038-1101(91)90133-j

Cited by 8 publications

(5 citation statements)

References 2 publications

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“…As mentioned above, it can be observed clearly that as the channel length is decreased, the SDFD-SOI structure exhibits lower threshold voltage roll-off than the C-SOI structure. The so-called reverse short channel effect 25,26) is clearly seen here as the threshold voltage slightly increases with a decrease in the channel length for SDFD-SOI MOSFET. This is because of the screening of the drain voltage as the channel length decreases due to the step function in the surface potential profile and the surface potential minima is essentially least effected.…”

Section: Resultsmentioning

confidence: 84%

A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

Elahipanah¹,

Orouji²

2009

Jpn. J. Appl. Phys.

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For first time, we report a novel deep sub-micron fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (FD SOI MOSFET) where the channel layer consists of two sections with a step doping (SD) region in order to increase performance and reliability of the device. This new structure that called SD FD SOI structure (SDFD-SOI MOSFET), were used for reaching suitable threshold voltage upon device scaling and reliability improvement. We demonstrate that the electric field was modified in the channel and common peak near the source junction have been reduced in the SDFD-SOI structure. The device demonstrates large enhancements in performance areas such as current drive capability, output resistance, hot-carrier reliability and threshold voltage roll-off. It was found that the device performance is very much dependent upon the SD region parameters. Simulation results show that the proposed structure improved on/off current ratio, and saturated output characteristics compared with conventional SOI structure (C-SOI MOSFET). Also, it was shown that substrate current of SDFD-SOI MOSFET is much lower than the C-SOI MOSFET which presented the lower hot-carrier degradation in proposed MOSFET. Results show that the most short-channel problems in very large scale integrated circuits (VLSI) could be solved and the proposed SDFD-SOI MOSFETs can work very well in deep sub-micron and nanoscale regime.

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Section: Resultsmentioning

confidence: 84%

A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

Elahipanah¹,

Orouji²

2009

Jpn. J. Appl. Phys.

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“…and (11) where is the long-channel threshold voltage and is a fitting parameter to account for the difference between technology generations.…”

Section: Modelmentioning

confidence: 99%

“…The more the pocket dopant is implanted into the channel region, the larger the -factor. It is interesting to note that, based on the model prediction [(9)- (11)], the amount of shift due to pocket implant, , is approximately proportional to rather than the net pocket dose,…”

Section: Modelmentioning

confidence: 99%

“…For example, for a given allowed overshoot (and a given allowed i.e., given ), there is only a certain range of allowed (9). Even though (9) has been derived for constant doping in the pocket region, each value can represent an infinite combination of and (11). Hence it is not entirely surprising that the model (9) with as a semi-empirical parameter can model devices with any realistic pocket impurity profiles (Figs.…”

Section: A Effect Of Pocket Implant Dose and Energymentioning

confidence: 99%

“…It is shown that the RSCE is more pronounced when a substrate bias voltage is applied. This is because increases as increases (11). In a real design, the overshoot should be limited by monitoring at the maximum condition (the worse case).…”

Section: B Effect Of Diblmentioning

confidence: 99%

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Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's

Wann

Nowak³

et al. 1997

IEEE Trans. Electron Devices

157

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The normal and reverse short-channel effect of LDD MOSFET's with lateral channel-engineering (pocket or halo implant) has been investigated. An analytical model is developed which can predict V th as a function of L e ; VDS; VBS, and pocket parameters down to 0.1-m channel length. The new model shows that the V th roll-up component due to pocket implant has an exponential dependence on channel length and is determined roughly by (Np) 1=4 Lp. The validity of the model is verified by both experimental data and two-dimensional (2-D) numerical simulation. On the basis of the model, a methodology to optimize the minimum channel length Lmin is presented. The theoretical optimal pocket implant performance is to achieve an Lmin approximately 5560% that of a uniform-channel MOS-FET without pocket implant, which is a significant (over one technology generation) improvement. The process design window of pocket implant is analyzed. The design tradeoff between the improvement of short-channel immunity and the other device electrical performance is also discussed. I. INTRODUCTION T HE REDUCTION of threshold voltage with decreasing channel length and increasing drain voltage is widely used as an indicator of the short-channel effect in evaluating CMOS technologies. This adverse roll-off effect is perhaps the most daunting road block in future MOSFET design. The device minimum acceptable channel length, , is primarily determined by the roll-off. The roll-off can be reduced or even reversed, i.e., the increases with decreasing channel length, by locally raising the channel doping next to the drain or drain/source junctions. The socalled Reverse Short-Channel Effect (RSCE) was originally observed in MOSFET's due to oxidation-enhanced-diffusion [1] or implant-damage-enhanced diffusion [2] which are very difficult to control. In the past few years, the locally high doping concentration in the channel near source/drain junctions has been implemented via lateral channel engineering,

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Significant Physical Effects In Modern MOSFETs

Mosfet Modeling &Amp; BSIM3 User’s Guide

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Physical mechanism of the “reverse short-channel effect” in MOS transistors

Cited by 8 publications

References 2 publications

A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's

Significant Physical Effects In Modern MOSFETs

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