Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

Caron, Pablo; Inguimbert, C.; Artola, L.; Ecoffet, R.; Bezerra, F.

doi:10.1109/tns.2019.2902758

Cited by 20 publications

(25 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An intermediate region is also identifiable after the ionization contribution and up to 3-4 MeV. Similarly to what has been already shown for other devices [9], [10], [15], this SEU region is mainly dominated by the elastic Coulomb process. Beyond 20 MeV, proton-induced SEU cross sections are roughly constant (near to 6 ⋅ 10 −15 cm²/bit).…”

Section: B Proton-induced Seusupporting

confidence: 80%

“…As the relevance of the RPP (Rectangular Parallelepiped) approach has already been shown in [2], [7]- [9], [15] this approach has been chosen to evaluate the on-orbit SEU rate in this paper. In this approximation, the sensitive regions are Role of Electron-induced Coulomb Interactions to the Total SEU Rate during Earth and JUICE Missions P. Caron, C. Inguimbert, L. Artola, F. Bezerra, R. Ecoffet assumed to be parallelepipeds with a given sensitive surface and a given sensitive thickness.…”

Section: A Rpp Methodsmentioning

confidence: 99%

“…The overlayers were assumed to be silicon layers. The dimensions of the structure were determined as explained in [15] and a thickness of about 5 microns was applied.…”

Section: A Rpp Methodsmentioning

confidence: 99%

“…2) is dominated by the direct ionization process. Above about 20 MeV, the contribution of elastic Coulomb reactions becomes the main contributor to the SEU cross sections [9], [15]. For such devices (associated with low critical charges), electronuclear contributions are negligible.…”

Section: B Proton-induced Seumentioning

confidence: 99%

See 3 more Smart Citations

Role of Electron-Induced Coulomb Interactions to the Total SEU Rate During Earth and JUICE Missions

Caron

Inguimbert

Artola

et al. 2021

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

The contribution of Coulomb processes induced by incident electrons in SEU sensitivity is investigated. The case of a 65-nm SOI memory is studied. Several orbits (GPS, JUICE's orbits) are analyzed. The relative importance to the total SEU rate of electron, proton and gamma environments is compared. SEU induced by electrons are obtained during Earth missions. In the environment of Jupiter, equivalent SEU sensitivities have been obtained between the studied device and the ESA SEU monitor. However, the relative importance of the physical processes involved is very different. Proton-induced SEU rates are estimated about one decade greater than electron-induced SEU rates. The Bremsstrahlung contribution has found negligible in such environment.

show abstract

Section: B Proton-induced Seusupporting

confidence: 80%

Section: A Rpp Methodsmentioning

confidence: 99%

“…The overlayers were assumed to be silicon layers. The dimensions of the structure were determined as explained in [15] and a thickness of about 5 microns was applied.…”

Section: A Rpp Methodsmentioning

confidence: 99%

Section: B Proton-induced Seumentioning

confidence: 99%

See 2 more Smart Citations

Role of Electron-Induced Coulomb Interactions to the Total SEU Rate During Earth and JUICE Missions

Caron

Inguimbert

Artola

et al. 2021

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Static corrective controllers [12,13] are a promising alternative to dynamic ones. Consisting of only combinational logic with no states, static controllers are superior to dynamic ones in terms of not only resource usage, but also robustness against exogenous disturbances, as memory elements representing system states are frequently offended by faults [14,15]. On the other hand, they have a drawback in that their existence conditions are more restrictive than dynamic ones, due to the absence of the controller's states.…”

Section: Introductionmentioning

confidence: 99%

State-Burst Feedback Control for Fault Recovery of Input/State Asynchronous Sequential Machines

2021

View full text Add to dashboard Cite

Static corrective controllers are more efficient than dynamic ones since they consist of only logic elements, whereas their existence conditions are more restrictive. In this paper, we present a static corrective control scheme for fault diagnosis and fault tolerant control of input/state asynchronous sequential machines (ASMs) vulnerable to transient faults. The design flexibility of static controllers is enlarged by virtue of using a diagnoser and state bursts. Necessary and sufficient conditions for the existence of a diagnoser and static fault tolerant controller are presented, and the process of controller synthesis is addressed based on the derived condition. Illustrative examples on practical ASMs are provided to show the applicability of the proposed scheme.

show abstract

Nuclear elastic scattering of protons below 250 MeV in FLUKA v4-4.0 and its role in single-event-upset production in electronics

Şerban,

Coronetti,

García Alía

et al. 2024

Computer Physics Communications

View full text Add to dashboard Cite

Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

Cited by 20 publications

References 23 publications

Role of Electron-Induced Coulomb Interactions to the Total SEU Rate During Earth and JUICE Missions

Role of Electron-Induced Coulomb Interactions to the Total SEU Rate During Earth and JUICE Missions

State-Burst Feedback Control for Fault Recovery of Input/State Asynchronous Sequential Machines

Nuclear elastic scattering of protons below 250 MeV in FLUKA v4-4.0 and its role in single-event-upset production in electronics

Contact Info

Product

Resources

About