Physical model of CdS-based thin-film photovoltaic junctions

Cooray, M. L. C.; Karpov, V. G.

doi:10.1063/1.2181201

Cited by 12 publications

(3 citation statements)

References 8 publications

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“…2. The gull-wing model of Fig.2b describes a number of experimental facts, such as the lack of carrier collection from CdS [7,8]. This polarization enhances the electric field in the absorber layer, thus improving the carrier collection and Voc.…”

Section: Introductionmentioning

confidence: 99%

Piezo-photovoltaic device operations

Cooray¹,

Shvydka

Karpov³

2008

2008 33rd IEEE Photovolatic Specialists Conference

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DEVICE OPERATIONSWe start with the band diagrams of CdS/CdTe devices shown in Fig.2. We consider the CdS polarizations of both signs leading to either the "gull-wing"-shaped potential (Fig. 2b) and the opposite, "hunch" one ( Fig. 2c), in comparison with the "reference" device structure that does not have a dipole layer and represents the standard p-n junction (Fig. 2a). The question of matter is how the major PV parameters, efficiency, Voc, Jsc, and fill factor FF depend on the polarization electric field in the CdS region.

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Section: Introductionmentioning

confidence: 99%

Piezo-photovoltaic device operations

Cooray¹,

Shvydka

Karpov³

2008

2008 33rd IEEE Photovolatic Specialists Conference

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“…To our knowledge this is the first time that a hybrid heterojunction including a nanostructure material is going to be simulated in AMPS simulator or even in a simulator platform. This tool is widely used for the simulation of the thin film or silicon based photovoltaics [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Carbon Nanotubes/GaAs Hybrid PV Devices with AMPS-1D

Xosrovashvili

Gorji

2014

International Journal of Photoenergy

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The performance and characteristics of a hybrid heterojunction single-walled carbon nanotube and GaAs solar cell are modelled and numerically simulated using AMPS-1D device simulation tool. The device physics and performance with different junction parameters are analysed. The results suggest that the open-circuit voltage changes very slightly by changing the electron affinity, acceptor and donor density while the other electrical parameters reach an optimum value. Increasing the concentration of a discrete defect density in the absorber layer decreases the electrical parameters. The current-voltage characteristics, quantum efficiency, band gap, and thickness variation of the photovoltaic response will be quantitatively considered.

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“…This shift in the VB can be produced by Cu-poor surface phases (i.e., by Cu(In,Ga) 3 Se 5 or by intentional Ga/In/Se/S grading [17]. In this profile the VB is kept fixed while the conduction band offset increases to widen the band gap.…”

Section: Valence Band Gradingmentioning

confidence: 99%